AL10266 Sapphire Wafer Al2O3 R plane 10x10x1.0 mm

Sapphire Wafer Al2O3 R plane 10x10x1.0 mm Description

Sapphire Wafer Al2O3 R plane 10x10x1.0 mm is a high-purity, single-crystal Al2O3 substrate with a well-defined R plane orientation. The 10x10x1.0 mm dimensions ensure compatibility with standard semiconductor processing equipment. The wafer exhibits uniform surface flatness and low defect density, which enhances its performance as a substrate in various device fabrications. Its chemical inertness and thermal stability are crucial for advanced microelectronic applications.

Sapphire Wafer Al2O3 R plane 10x10x1.0 mm Applications

Electronics and Semiconductor Applications
- Used as a substrate in semiconductor fabrication to achieve low defect interfaces through its high chemical inertness.
- Applied as an insulating layer in RF circuits to enhance signal integrity using its consistent dielectric properties.

Industrial Applications
- Used as a precision component in sensor assemblies to ensure accurate signal transduction, utilising its uniform crystallographic orientation.
- Applied in microelectronic device packaging to provide a stable base, reducing potential thermal mismatches during operation.

Sapphire Wafer Al2O3 R plane 10x10x1.0 mm Packing

The wafer is packaged in an anti-static container with foam cushioning inside a sealed box to minimise mechanical shock and particulate contamination. A humidity indicator is included, and the package is designed to maintain a controlled environment. The packaging supports safe handling during transit and storage under temperature and humidity-controlled conditions. Custom packaging options are available to meet specific handling requirements.

Frequently Asked Questions

Q1: What is the significance of the R-plane orientation in this sapphire wafer?
A1: The R-plane orientation produces a surface with reduced atomic steps and enhanced flatness. This minimises the potential for surface defects and optimises the interface conditions vital for semiconductor layering and device fabrication.

Q2: How is the dimensional tolerance maintained in the 10x10x1.0 mm wafer?
A2: Dimensional tolerance is achieved through precision cutting and polishing techniques, combined with in-line metrology. These measures ensure the wafer meets strict dimensional requirements necessary for integration with standard processing equipment.

Q3: What quality control measures are applied during production?
A3: Quality control includes crystallographic analysis, surface inspection using microscopy, and thickness uniformity evaluations. These checks verify the wafer's consistency and enable the minimisation of defects, ensuring it meets the standards required for advanced applications.

Additional Information

Aluminium oxide-based substrates are central to modern microelectronics due to their exceptional thermal stability and electrical insulation properties. Sapphire wafers are extensively used in thin film deposition processes and serve as a critical foundation for epitaxial growth in semiconductor manufacturing. Their unique crystallographic properties contribute to uniformity in device performance.

Advancements in wafer fabrication continue to improve surface finish and dimensional accuracy, which are essential for high-frequency and optoelectronic applications. The integration of precise cutting techniques and automated quality control systems plays a vital role in reducing defects and enhancing overall wafer performance in complex device architectures.