AL10267 Sapphire Wafer Al2O3 R plane 12.7 mm x 12.7 mm x 0.5 mm

Sapphire Wafer Al2O3 R plane 0.5 inch x0.5 inch x0.5 mm Description

Sapphire Wafer Al2O3 R plane 0.5 inch x0.5 inch x0.5 mm is a high-purity aluminium oxide substrate with a specific R-plane orientation. Its compact dimensions facilitate integration with standard semiconductor processing equipment. The R-plane cut enhances surface uniformity, which is critical for minimising dislocation propagation in device fabrication. The material's chemical inertness and mechanical hardness offer benefits in environments requiring high thermal and chemical stability.

Sapphire Wafer Al2O3 R plane 0.5 inch x0.5 inch x0.5 mm Applications

Electronics and Semiconductors
- Used as a substrate in thin-film deposition systems to achieve uniform film growth by leveraging the precise crystal orientation.
- Applied as a base for high-temperature sensor elements to enable stable operation in harsh thermal environments by benefiting from Al2O3’s thermal stability.

Optoelectronics
- Serves as a platform in LED manufacturing to improve light extraction efficiency by utilising its high optical clarity.
- Frequently used for laser diode mounts to maintain structural integrity under high operational current densities through its superior hardness.

Sapphire Wafer Al2O3 R plane 0.5 inch x0.5 inch x0.5 mm Packing

Sapphire Wafer Al2O3 R plane 0.5 inch x0.5 inch x0.5 mm is packaged in an anti-static, cushioned container to mitigate mechanical stress and prevent particulate contamination. The use of inert, moisture-resistant materials ensures protection during transit and storage. The packaging is designed to control environmental exposure and can include customised labelling and compartmentalisation based on specific handling requirements.

Frequently Asked Questions

Q1: How does the R-plane orientation affect substrate performance?
A1: The R-plane orientation promotes a uniform atomic arrangement, facilitating consistent film deposition and reducing defect propagation during device fabrication. This results in improved processing yields and device performance under high-precision manufacturing conditions.

Q2: What measures are taken to control impurity levels in the wafer?
A2: The production process includes rigorous environmental controls and surface metrology, such as SEM inspections, to monitor and minimise impurities. This protocol ensures that the wafer maintains the high-purity standard required for advanced semiconductor applications.

Q3: Can this wafer be integrated with standard semiconductor processing equipment?
A3: Yes, the wafer’s compact size and uniform R-plane surface are compatible with standard semiconductor processing tools. This compatibility facilitates integration in various microelectronic fabrication processes without requiring extensive equipment modifications.

Additional Information

Aluminium oxide, known as Al2O3, is widely used in substrate materials due to its excellent thermal and chemical stability. Its high melting point and mechanical strength make it suitable for high-temperature processing and applications where material durability is paramount. The R-plane cut specifically provides a well-defined crystallographic orientation that aids in achieving consistent film deposition.

In the broader context of materials science, substrates like sapphire wafers contribute significantly to the advancement of microelectronic and optoelectronic devices. Detailed control over crystallographic properties and defect density is critical for ensuring the performance and longevity of high-tech components in competitive industrial environments.