AL10270 Sapphire Wafer Al2O3 A plane (11-20) 10x5x0.5 mm

Sapphire Wafer Al2O3 A plane (11-20) 10x5x0.5 mm Description

The sapphire wafer, composed of high-purity aluminium oxide (Al2O3), features an A-plane (11-20) cut with dimensions of 10 mm by 5 mm by 0.5 mm. Its specific crystallographic orientation is engineered to reduce dislocation density and support uniform epitaxial layer deposition. The controlled composition and meticulous surface finish enable accurate integration into semiconductor process flows and optoelectronic experiments, ensuring performance consistency in research and production settings.

Sapphire Wafer Al2O3 A plane (11-20) 10x5x0.5 mm Applications

Electronics and Semiconductor Processing
- Used as a substrate in semiconductor fabrication to achieve uniform epitaxial growth by leveraging the wafer’s low dislocation density.

Optoelectronic Systems
- Applied as a mounting platform in laser and sensor assemblies to improve optical stability by leveraging its controlled crystal orientation.

Scientific Research
- Used as a reference material in crystallographic studies to achieve precise measurement results by leveraging its reproducible dimensions and chemical purity.

Sapphire Wafer Al2O3 A plane (11-20) 10x5x0.5 mm Packing

The sapphire wafer is secured in an anti-static, low-lint pouch and further protected by a foam-lined rigid container to prevent mechanical damage and particulate contamination. The packaging design minimises exposure to moisture and environmental contaminants during storage and transit. It is recommended to store the wafer in a temperature-controlled, low-humidity environment. Additional custom packaging solutions with enhanced cushioning and compartmentalisation are available upon request.

Frequently Asked Questions

Q1: What techniques are used to verify the wafer’s surface uniformity?
A1: Surface uniformity is assessed using interferometry and scanning electron microscopy, which provide detailed insights into surface morphology and defect distribution critical for epitaxial deposition.

Q2: How is the A-plane (11-20) orientation maintained during fabrication?
A2: The orientation is controlled through precise cutting and alignment procedures verified by X-ray diffraction analysis, ensuring a consistent crystallographic plane suitable for high performance.

Q3: What storage conditions are advised to safeguard the wafer integrity?
A3: The wafer should be stored in a temperature-controlled, low-humidity environment with proper anti-static protection to mitigate contamination and prevent any physical or chemical degradation.

Additional Information

Sapphire, or aluminium oxide (Al2O3), is known for its excellent thermal stability and chemical inertness. These properties make it a critical material in substrates used for semiconductor and optoelectronic applications. Its crystalline structure enables minimal lattice mismatch during epitaxial growth, essential for developing high-performance devices.

Advances in material processing have led to improved control over crystallographic orientation and surface finish. Understanding these properties provides valuable insights into substrate behaviour under different processing conditions, thereby enhancing overall device performance and reliability in complex industrial applications.