AL10272 Sapphire Wafer Al2O3 C-plane (0001) Dia. 75 mm x 0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) Dia. 3 inch x 0.5 mm Description

This wafer consists of single-crystal Al2O3, known for its high melting point and chemical stability. The C-plane (0001) orientation ensures a smooth, uniform surface that is essential for uniform thin film deposition and device fabrication. The 3-inch diameter and 0.5 mm thickness are maintained with tight tolerances to accommodate standard semiconductor processing equipment. The material properties support applications that require high dielectric strength and resistance to thermal shock.

Sapphire Wafer Al2O3 C-plane (0001) Dia. 3 inch x 0.5 mm Applications

1.       Electronics and Semiconductor Manufacturing
   - Used as a substrate in integrated circuits to achieve uniform film growth by leveraging its consistent crystallographic orientation.
   - Applied as a platform for epitaxial layers in LED fabrication to enhance device performance through controlled surface properties.

2.       Optoelectronics and Sensors
   - Serves as a base in optical sensors to improve signal uniformity by utilising its low surface roughness.
   - Employed in photonic devices to facilitate consistent light transmission by leveraging the material’s high transparency and chemical stability.

Sapphire Wafer Al2O3 C-plane (0001) Dia. 3 inch x 0.5 mm Packing

The wafer is individually secured in a clean room-grade, anti-static packaging to minimise particulate contamination and mechanical damage. It is enclosed in an acrylic carrier and cushioned with foam inserts. The package is sealed in an inert, moisture-resistant envelope to maintain surface integrity during transit and storage. Handling guidelines support the maintenance of the wafer’s pristine condition, and customisation options are available for specific handling protocols.

Frequently Asked Questions

Q1: What measures are implemented to control the wafer’s crystallographic uniformity?
A1: The manufacturing process includes controlled high-temperature annealing and in-line atomic force microscopy inspections to evaluate the surface uniformity and detect any deviations in the (0001) orientation.

Q2: How does the wafer’s thickness tolerance influence device fabrication?
A2: A consistent 0.5 mm thickness ensures compatibility with standard equipment and precise alignment during photolithography, thereby reducing process variations and enhancing device performance.

Q3: What storage conditions are recommended to preserve the wafer’s properties?
A3: The wafer should be stored in a low-humidity, temperature-regulated environment within anti-static packaging to prevent surface contamination and structural stress that could impact its performance.

Additional Information

Aluminium oxide (Al2O3) wafers serve as essential substrates in various high-temperature and corrosive environments due to their excellent thermal stability and chemical inertness. The controlled C-plane orientation is critical for applications that require uniform surface energy, influencing film adhesion and epitaxial growth.

Understanding the importance of crystallographic orientation in sapphire substrates can aid researchers in optimising deposition techniques and refining device architectures. Such insights are valuable when developing advanced semiconductor and optoelectronic systems where material properties directly impact operational efficacy.