AL10274 Sapphire Wafer Al2O3 M Plane Dia. 2 inch x 0.5 mm

Sapphire Wafer Al2O3 M Plane Dia. 2 inch x 0.5 mm Description

Sapphire Wafer Al2O3 M Plane Dia. 2 inch x 0.5 mm consists of aluminium oxide (Al2O3) processed into a wafer with a defined M plane crystallographic orientation. The 2-inch diameter and 0.5 mm thickness fit standard semiconductor processing equipment, ensuring compatibility and ease of integration. The material’s chemical inertness and thermal conductivity make it suitable for applications where electrical insulation and mechanical stability are critical.

Sapphire Wafer Al2O3 M Plane Dia. 2 inch x 0.5 mm Applications

1.       Electronics Applications
   - Used as a substrate in LED devices to achieve efficient light extraction by leveraging the chemical stability and high thermal conductivity.
   - Applied as a base in high-frequency RF circuits to improve signal integrity by utilising its low dielectric loss properties.

2.       Industrial Applications
   - Used as an insulating platform in semiconductor processing tools to maintain process consistency via its uniform thickness and crystallinity.
   - Employed as a carrier for thin-film deposition in microelectronic devices, providing a stable and inert surface.

3.       Optoelectronics Applications
   - Used as a window material in high-temperature optical sensors to ensure clear signal transmission by leveraging its excellent optical transparency and mechanical strength.

Sapphire Wafer Al2O3 M Plane Dia. 2 inch x 0.5 mm Packing

The wafer is packaged in an anti-static, foam-lined container to minimise mechanical stress and surface contamination. It is sealed in a moisture barrier bag to prevent exposure to atmospheric humidity. The packaging supports ambient temperature storage and is available in custom configurations to meet specific laboratory handling requirements, including individual labelling and cushioning layers.

Frequently Asked Questions

Q1: How does the M plane orientation affect wafer performance?
A1: The M plane orientation produces a specific crystallographic surface that enhances uniformity in thin-film deposition. This characteristic is essential for applications requiring minimised lattice mismatch and precise film growth.

Q2: What quality control methods are implemented during production?
A2: Production includes interferometric surface inspection and controlled thermal treatment to ensure uniform thickness and minimal defect density. These measures contribute to consistent material characteristics across batches.

Q3: How should the wafer be stored to maintain its properties?
A3: It is recommended to store the wafer in a controlled, dry environment to avoid moisture absorption. Anti-static packaging and stable ambient conditions help maintain the substrate’s properties over time.

Additional Information

Sapphire wafers made from Al2O3 are widely utilised in semiconductor and optoelectronic industries due to their excellent thermal conductivity and dielectric properties. The crystalline structure of sapphire provides a stable platform for high-temperature processes and thin-film deposition. Understanding the impact of crystallographic orientation and surface treatment is crucial for engineering applications that require precision and durability. Advanced processing techniques continue to enhance the performance of these substrates in modern fabrication processes.