AL10276 Sapphire Wafer Al2O3 (0001) Dia. 4 inch x 0.5 mm

Sapphire Wafer Al2O3 (0001) Dia. 4 inch x 0.5 mm Description

Sapphire Wafer Al2O3 (0001) Dia. 4 inch x 0.5 mm is fabricated from high-purity aluminium oxide (Al2O3) with an accurately maintained (0001) orientation. The 4-inch diameter ensures compatibility with standard semiconductor processing equipment, while the 0.5 mm thickness contributes to consistent mechanical and thermal performance. Its chemical inertness and hardness make it suitable for applications requiring high stability and minimal surface imperfections.

Sapphire Wafer Al2O3 (0001) Dia. 4 inch x 0.5 mm Applications

1.       Electronics
- Used as a substrate in RF circuits to minimise signal loss by leveraging the material’s dielectric properties.

2.       Semiconductor Fabrication
- Serves as a support wafer for integrated circuit processing to maintain dimensional consistency through its controlled thickness and low defect density.

3.       Optoelectronic Devices
- Applied as a base in LED and laser manufacturing to aid thermal management by utilising its high thermal conductivity and chemical inertness.

Sapphire Wafer Al2O3 (0001) Dia. 4 inch x 0.5 mm Packing

The wafer is individually secured in an anti-static container with foam cushioning to prevent scratches. It is then sealed in a nitrogen-purged bag to limit moisture exposure and particulate contamination. Storage in a temperature-controlled, dust-free environment is recommended. Custom packaging options, including additional protective layers and labelling, are available based on specific handling requirements.

Frequently Asked Questions

Q1: What is the significance of the (0001) orientation in this sapphire wafer?
A1: The (0001) orientation provides an atomically smooth basal plane that improves epitaxial layer growth and minimises dislocation density, which is critical for high-precision semiconductor and optical applications.

Q2: How does the consistent 0.5 mm thickness benefit wafer processing?
A2: A uniform 0.5 mm thickness ensures compatibility with standard processing tools, minimises mechanical stress during high-temperature operations, and helps maintain consistent heat distribution across the wafer.

Q3: What storage practices are recommended for this wafer?
A3: It should be stored in a clean, temperature-controlled, anti-static environment. The use of nitrogen-purged, sealed packaging and controlled humidity conditions helps prevent contamination and preserve the substrate’s structural integrity.

Additional Information

Sapphire, or crystalline aluminium oxide (Al2O3), is valued in materials science due to its excellent thermal conductivity, mechanical hardness, and chemical inertness. These properties are critical in applications where substrates must withstand high temperatures and aggressive processing environments. The (0001) orientation facilitates a uniform crystal structure, which is essential in processes such as epitaxial growth.

Advancements in synthesis techniques, including chemical vapor deposition and precise surface characterisation methods like SEM and XRD, have enabled the production of sapphire wafers with minimal defect densities. These developments allow for the integration of sapphire substrates into semiconductor devices, optoelectronic systems, and high-temperature applications where material consistency is vital.