AL10279 Sapphire Wafer Al2O3 A plane (11-20) Dia. 2 inch x 0.5 mm

Sapphire Wafer Al2O3 A plane (11-20) Dia. 2 inch x 0.5 mm Description

Sapphire Wafer Al2O3 A plane (11-20) Dia. 2 inch x 0.5 mm is produced from Al2O3, featuring a precise (11-20) orientation that supports enhanced process control in microelectronics and photonics. The 2-inch diameter ensures compatibility with standard processing equipment, while the 0.5 mm thickness aids in minimising warpage during subsequent processing steps. This wafer is engineered to deliver dimensional uniformity and surface integrity for highly sensitive applications.

Sapphire Wafer Al2O3 A plane (11-20) Dia. 2 inch x 0.5 mm Applications

Electronics and Semiconductor Applications
- Used as a substrate in integrated circuits to achieve uniform dielectric properties by leveraging its controlled crystallographic orientation.
- Applied in power devices to minimise parasitic currents through enhanced thermal conductivity and surface quality.

Optical Devices
- Frequently used as a base for LED and laser modules to secure optical clarity and thermal stability by utilising its inherent transparency.

Industrial Instrumentation
- Serves as a sensor platform in precision measurement systems to maintain structural integrity under thermal cycling by leveraging its mechanical properties.

Sapphire Wafer Al2O3 A plane (11-20) Dia. 2 inch x 0.5 mm Packing

The wafer is packaged in a static-dissipative carrier with cushioned foam and anti-contamination layers. It is sealed within a controlled-environment bag and positioned in a rigid support frame to guard against mechanical stresses. Recommended storage conditions include a clean, dry, temperature-controlled facility to maintain integrity. Custom packaging options are available based on specific handling and logistics requirements.

Frequently Asked Questions

Q1: How does the (11-20) crystallographic orientation influence processing outcomes?
A1: The (11-20) orientation provides a uniform crystallographic plane that facilitates consistent etch rates and minimises dislocation density. This contributes to enhanced process reproducibility during device fabrication, essential for semiconductor and optoelectronic applications.

Q2: What inspection methods are used to control wafer quality?
A2: The manufacturing process involves interferometry, surface profilometry, and atomic force microscopy to monitor flatness and detect surface irregularities. These techniques verify that thickness and defect density remain within strict tolerances throughout production.

Q3: Can this wafer be integrated into processes that involve high temperatures?
A3: Yes, Al2O3 exhibits excellent thermal stability. The controlled 0.5 mm thickness and high-purity composition ensure that the wafer maintains its mechanical and optical properties under elevated temperature conditions.

Additional Information

Sapphire wafers, made of aluminium oxide, are recognised for their hardness, thermal conductivity, and chemical inertness. These features make them valuable in semiconductor manufacturing and optical device fabrication. A detailed understanding of sapphire crystal properties can help engineers optimise device performance and tailor processing parameters accordingly.

In materials science research, the study of crystallographic orientations provides insight into anisotropic properties that are critical when designing substrates for advanced applications. The controlled microstructure of sapphire wafers minimises defects and supports improved performance in high-precision environments.