AL10281 Sapphire Wafer Al2O3 (0001) Dia. 3 inch x 0.43 mm

Sapphire Wafer Al2O3 (0001) Dia. 3 inch x 0.43 mm Description

Sapphire Wafer Al2O3 (0001) Dia. 3 inch x 0.43 mm is a substrate formed from single-crystal aluminium oxide (Al2O3) with a (0001) orientation. The diameter of 3 inches and a thickness of 0.43 mm provide a standardised size for integration in semiconductor and optoelectronic manufacturing processes. The wafer exhibits an atomically smooth surface that aids in reducing defect propagation during epitaxial layer deposition. Its chemical inertness and thermal stability support its use in environments requiring sustained operational performance.

Sapphire Wafer Al2O3 (0001) Dia. 3 inch x 0.43 mm Applications

1.       Electronics
   - Used as a substrate in LED fabrication to achieve a consistent epitaxial layer by leveraging the wafer’s atomically flat surface.
   - Applied as a buffer layer in semiconductor devices to reduce defect density by leveraging its chemical inertness.

2.       Optoelectronics
   - Serves as a base in laser diode assemblies to achieve enhanced optical uniformity by leveraging its controlled (0001) orientation.
   - Used as a mounting platform in high-frequency circuits to mitigate signal loss by leveraging its high thermal stability.

Sapphire Wafer Al2O3 (0001) Dia. 3 inch x 0.43 mm Packing

The wafers are packaged in static-dissipative holders and secured in cushioned, anti-scratch containers to prevent mechanical damage. They are stored in temperature-controlled environments with moisture barriers to avoid contamination. Customised packaging options with additional labeling and compartmentalisation are available upon request to maintain substrate integrity during transport and storage.

Frequently Asked Questions

Q1: How does the thermal treatment process affect the wafer?
A1: Thermal processing is performed under controlled conditions to minimise thermal stress. The wafer’s inherent thermal stability ensures minimal structural changes during standard annealing steps, preserving its surface morphology and crystalline quality for subsequent device fabrication.

Q2: What handling precautions are recommended during wafer cleaning?
A2: It is advised to use non-abrasive cleaning techniques in a cleanroom environment. Avoid mechanical stress and contamination by using ultra-pure solvents and lint-free materials to maintain the substrate's surface integrity and prevent defect introduction.

Q3: Can customisation be applied to wafer dimensions or surface treatments?
A3: Custom dimensions and surface modifications can be accommodated. Specific requests such as alternative thickness or post-process surface treatments are evaluated on a case-by-case basis to suit particular integration requirements in industrial processes.

Additional Information

Aluminium oxide (Al2O3) is a fundamental ceramic material known for its hardness, chemical resistance, and high melting point, making it suitable for various high-performance applications. Its single-crystal form, commonly known as sapphire, is critical in fields where superior optical and insulating properties are essential.

The development and processing of sapphire wafers involve stringent quality control and advanced deposition methods. These processes ensure low defect densities and enhanced surface characteristics important for applications in semiconductor devices, optoelectronics, and other industrial sectors.