AL10282 Sapphire Wafer Al2O3 (0001) 100 mm Dia. x 0.65 mm

Sapphire Wafer Al2O3 (0001) 100 mm Dia. x 0.65 mm Description

Sapphire Wafer Al2O3 (0001) 100 mm Dia. x 0.65 mm is a precisely fabricated crystalline substrate composed of aluminium oxide. The defined (0001) orientation and tight dimensional tolerances enable compatibility with standard semiconductor processing equipment. Its uniform thickness and low defect density facilitate high-accuracy epitaxial depositions and microelectronic device fabrication, supporting advanced material research and development processes.

Sapphire Wafer Al2O3 (0001) 100 mm Dia. x 0.65 mm Applications

Electronics
- Use as a substrate in semiconductor devices to achieve uniform epitaxial deposition by leveraging its controlled (0001) crystallographic orientation.

Optoelectronics
- Applied as a base material in LED and laser diode manufacturing to enhance optical clarity by leveraging its high optical transmittance and precise surface flatness.

Scientific Research
- Used as a test platform for advanced material studies to achieve low dislocation densities by leveraging its consistent crystalline structure and uniform thickness.

Sapphire Wafer Al2O3 (0001) 100 mm Dia. x 0.65 mm Packing

The wafers are individually secured in anti-static, cushioned carriers and placed within rigid, cleanroom-compatible trays. They are packaged with moisture-resistant materials to prevent contamination. Storage recommendations include a dry, temperature-controlled environment. Custom labeling and compartmentalised packaging options are available to meet specific storage and handling protocols.

Frequently Asked Questions

Q1: How does SAM ensure the wafer surface flatness and defect control?
A1: SAM employs optical interferometry and SEM inspection during processing to measure surface flatness and monitor defect density, ensuring each wafer meets strict performance criteria for subsequent manufacturing processes.

Q2: What measures are taken to prevent contamination during wafer handling?
A2: Wafers are processed in cleanroom conditions and packaged in anti-static, moisture-resistant containers. These measures minimise particulate fallout and surface contamination, preserving the wafer’s structural integrity.

Q3: How do the dimensional tolerances affect downstream processing?
A3: Consistent diameter and thickness directly influence process uniformity in epitaxial deposition. Tight tolerances ensure compatibility with standard processing tools, reducing variability in device fabrication.

Additional Information

Aluminium oxide (Al2O3) plays a critical role in various high-performance applications due to its chemical inertness and excellent thermal properties. Sapphire substrates are extensively used in semiconductor and optical devices where precise microstructural uniformity and low defect densities are essential.

Advanced fabrication methods, including chemical vapour deposition and surface profilometry, enable accurate control over crystal orientation and thickness. Such precision is vital for applications in microelectronics and material research, where even minor variances can affect overall device performance.