AL10283 Sapphire Wafer Al2O3 (0001) Dia. 2 inch x 0.5 mm

Sapphire Wafer Al2O3 (0001) Dia. 2 inch x 0.5 mm Description

Sapphire Wafer Al2O3 (0001) Dia. 2 inch x 0.5 mm is a single-crystal alumina wafer with a controlled (0001) orientation. The 2-inch diameter and 0.5 mm thickness ensure compatibility with standard semiconductor processing equipment. Its atomically flat surface and low defect density support high-precision epitaxial film deposition. The substrate's composition (Al2O3) provides excellent chemical resistance and thermal stability, making it suitable for advanced optical and electronic device fabrication.

Sapphire Wafer Al2O3 (0001) Dia. 2 inch x 0.5 mm Applications

Electronics
- Used as a substrate in semiconductor devices to achieve uniform epitaxial layer growth by leveraging the wafer's controlled (0001) crystallographic orientation.
- Applied in LED production to support high-quality film deposition through its atomically smooth surface.

Industrial
- Utilised as a dielectric barrier in high-temperature sensors to maintain performance stability by leveraging Al2O3's chemical resistance and thermal endurance.
- Employed as a precision substrate in optical devices to ensure consistent light transmission properties through its low defect density.

Sapphire Wafer Al2O3 (0001) Dia. 2 inch x 0.5 mm Packing

The wafers are individually secured in cleanroom-grade anti-static carriers and cushioned with foam inserts to prevent mechanical damage. They are subsequently sealed in inert atmosphere pouches to minimise moisture and particulate contamination. The packaging process incorporates anti-scratch liners and labels for traceability. Storage under controlled temperature and humidity conditions is recommended, with customisation options available for specific handling requirements.

Frequently Asked Questions

Q1: How does SAM control the defect density in these sapphire wafers?
A1: SAM employs quantitative surface metrology techniques, including scanning electron microscopy and atomic force microscopy, to monitor and control defect density. This ensures the wafer maintains the strict flatness and uniformity required for high-precision epitaxial processes in advanced semiconductor applications.

Q2: What measures are taken during manufacturing to achieve the (0001) orientation?
A2: The production process involves controlled crystal growth using high-purity alumina with strict orientation alignment procedures. Specialized thermal treatments and in-line X-ray diffraction measurements ensure that the final wafer consistently exhibits the (0001) orientation necessary for reliable device integration.

Q3: What are the recommended storage conditions for these wafers?
A3: The wafers should be stored in a clean, temperature-controlled environment with low humidity, ideally in anti-static containers. This minimises exposure to moisture and contaminants that could compromise the surface integrity and performance during subsequent processing.

Additional Information

Alumina (Al2O3) is widely recognised in materials science for its thermal stability and chemical inertness, making sapphire wafers an integral component in many electronic and optical fabrication processes. The controlled (0001) orientation optimises surface properties and enhances compatibility with thin-film deposition techniques, which is crucial for modern device manufacturing.

The rigorous control of crystal orientation and surface finish in these substrates is central to advancing high-performance applications. Understanding the interplay between processing conditions and material properties helps drive innovations in semiconductor technology and other high-temperature processing environments.