AL10284 Sapphire Wafer Al2O3 C-plane (0001) Dia. 25.4 mm x 0.5 mm

Sapphire Wafer Al2O3 C-plane (0001) Dia. 1 inch x 0.5 mm Description

The wafer is fabricated from sapphire (Al2O3) with a C-plane (0001) orientation, measured at 1 inch diameter and 0.5 mm thickness. Its structure supports low defect density and uniform surface quality, making it suitable for semiconductor, optical, and high-temperature applications. The precise crystallographic alignment enhances material consistency, crucial for processes such as epitaxial growth and high-frequency device fabrication.

Sapphire Wafer Al2O3 C-plane (0001) Dia. 1 inch x 0.5 mm Applications

Electronics and Semiconductor Applications
- Used as an insulating substrate in RF devices to achieve reduced parasitic capacitance by leveraging sapphire's high dielectric strength.
- Applied as a base for epitaxial layer deposition in semiconductor manufacturing to attain uniform film growth by leveraging the wafer's defined crystallographic orientation.

Industrial and Optical Applications
- Used as a component in imaging systems to achieve high light transmission by leveraging the material’s optical clarity and uniformity.
- Applied as a support substrate in LED and laser diode assembly to improve thermal management by leveraging sapphire’s excellent thermal conductivity.

Sapphire Wafer Al2O3 C-plane (0001) Dia. 1 inch x 0.5 mm Packing

The wafer is individually secured in an anti-static, cushioned container to prevent contamination and mechanical damage. The packaging includes a rigid carrier box lined with foam and sealed with moisture-resistant film. Storage recommendations specify a temperature-controlled, dry environment with anti-static provisions. Custom packaging options, including labelling and compartmentalisation, are available to meet specific storage and transport requirements.

Frequently Asked Questions

Q1: How does the specified wafer thickness affect its application in semiconductor processes?
A1: The 0.5 mm thickness ensures compatibility with standard semiconductor processing equipment, allowing for effective heat dissipation and mechanical support during high-temperature operations. This thickness also contributes to the wafer’s rigidity and minimal warping during processing.

Q2: What methods are used to assess the surface quality of the wafer?
A2: Surface quality is typically evaluated using optical inspection and surface roughness measurements. These methods detect minor imperfections and ensure that the wafer meets the required specifications for applications in high-precision fabrication.

Q3: What are the key precautions for handling the sapphire wafer during processing?
A3: Handling precautions include using non-abrasive tools, complying with anti-static procedures, and storing the wafer in a controlled, clean environment. These steps minimise the risk of surface damage and contamination during fabrication and transport.

Additional Information

Sapphire wafers, composed of crystalline Al2O3, are fundamental in environments requiring high thermal stability and chemical resistance. Their defined crystallographic orientation minimises lattice mismatches during epitaxial growth, which is crucial for the performance of semiconductor devices. Advances in polishing and substrate preparation further enhance the utility of sapphire in both electronic and optical industries.

The utilisation of sapphire in these applications stems from its ability to withstand extreme operating conditions, including high temperatures and corrosive environments. This makes sapphire an important material for research and development in areas such as optoelectronics and power electronics, where material stability is critical for device performance.