AL10285 Sapphire Wafer Al2O3 M Plane (10-10) Dia. 3 inch x 0.5 mm

Sapphire Wafer Al2O3 M Plane (10-10) Dia. 3 inch x 0.5 mm Description

The Sapphire Wafer Al2O3 M Plane (10-10) Dia. 3 inch x 0.5 mm uses high-purity Al2O3 to provide a substrate with an M plane (10-10) orientation. Its 3-inch diameter and 0.5 mm thickness ensure compatibility with standard semiconductor processing equipment. The specified crystallographic orientation contributes to uniform epitaxial layer growth and reduces defect density during film deposition. This precise substrate quality is critical for applications requiring controlled film properties and process reproducibility.

Sapphire Wafer Al2O3 M Plane (10-10) Dia. 3 inch x 0.5 mm Applications

1.      Electronics and Semiconductor Manufacturing
   - Used as a substrate in LED and transistor fabrication to achieve uniform film deposition by leveraging its precise M plane orientation.
   - Applied as a base in high-frequency device assembly to improve signal integrity by utilising its chemical inertness and stability.

2.      Optoelectronics
   - Serves as a platform in laser diode structures to enhance active layer coherence by capitalising on its uniform crystal structure.
   - Utilised in photonic devices to minimise scattering losses through its controlled surface characteristics.

Sapphire Wafer Al2O3 M Plane (10-10) Dia. 3 inch x 0.5 mm Packing

The wafer is packaged in a custom-designed, anti-static container lined with soft foam to prevent physical damage and contamination. Each wafer is sealed in an inert atmosphere pouch to protect against moisture and particulate ingress. Storage recommendations include cool, dry conditions, while customisation options such as individual labelling and modular inserts are available to support various handling and storage requirements.

Frequently Asked Questions

Q1: What processing techniques are used to verify the wafer’s surface quality?
A1: The wafer undergoes surface evaluation using high-resolution optical microscopy and interferometry. This inspection identifies surface defects and verifies flatness, ensuring the wafer meets the stringent requirements of deposition processes.

Q2: How does the M Plane (10-10) orientation affect thin film growth?
A2: The M Plane (10-10) orientation ensures uniform atomic arrangement on the surface, which facilitates consistent nucleation and growth of epitaxial films. This contributes to minimised defect density and enhanced electrical performance in semiconductor devices.

Q3: What storage protocols are recommended to maintain the wafer’s integrity?
A3: The wafer should be stored in a controlled environment with low humidity and stable temperature to prevent contamination and maintain surface properties. Protective packaging that minimises vibration and particulate exposure is essential during storage and transport.

Additional Information

Aluminium oxide (Al2O3) substrates play a crucial role in various semiconductor and optoelectronic applications due to their thermal stability and chemical inertness. The crystallographic orientation, particularly the M plane (10-10) in this case, is vital for optimising the epitaxial growth of thin films, ensuring consistent deposition across device layers. Researchers often consider these factors when selecting substrates for sensitive applications.

The detailed surface engineering and material processing protocols used in these wafers provide insight into advanced substrate preparation techniques. Understanding these methods aids in predicting wafer behaviour during subsequent device fabrication processes, thereby contributing to overall device performance optimisation in industrial settings.