AL10287 Sapphire Wafer Al2O3 R Plane 100 mm Dia x 0.525 mm

Sapphire Wafer Al2O3 R Plane 100 mm Dia x 0.525 mm Description

This wafer, composed of sapphire (Al2O3), features an R-plane crystallographic orientation that enhances layer alignment during epitaxial processing. The 100 mm diameter and 0.525 mm thickness comply with standard semiconductor tool requirements. Its chemical inertness and thermal stability benefit applications in crystal growth and device fabrication. Controlled surface flatness and minimal defect density are achieved via rigorous process monitoring, supporting reliable integration into advanced manufacturing workflows.

Sapphire Wafer Al2O3 R Plane 100 mm Dia x 0.525 mm Applications

Electronics and Semiconductors
- Used as a substrate for epitaxial layer deposition in semiconductor devices to achieve controlled crystallographic alignment by leveraging uniform surface properties.
- Applied as a base layer in LED fabrication to enhance thermal management by utilising the material’s high thermal conductivity.

Industrial Process Equipment
- Employed as a structural component in sensor assemblies to achieve accurate measurement performance by leveraging its chemical inertness and thermal stability.
- Used as a platform for high-temperature processing systems to maintain consistent performance through controlled material properties.

Sapphire Wafer Al2O3 R Plane 100 mm Dia x 0.525 mm Packing

The wafers are individually sealed in antistatic, cleanroom-grade pouches and positioned within rigid, foam-lined containers to prevent mechanical shock and contamination. Packaging is designed to exclude dust and moisture, maintaining a controlled inert environment. For storage and transit, climate-controlled conditions are recommended. Custom packaging options, including vacuum-sealed configurations and specialised labeling, are available per customer request.

Frequently Asked Questions

Q1: How is the R-plane orientation maintained during fabrication?
A1: The R-plane is achieved through precise cutting and alignment protocols. In-process optical inspection verifies the crystallographic orientation to ensure adherence to specified tolerances critical for subsequent layer deposition steps.

Q2: What measurement techniques are used for quality evaluation?
A2: Surface flatness, thickness, and defect density are evaluated using interferometry, scanning electron microscopy, and profilometry. These techniques provide quantitative feedback necessary for maintaining process consistency.

Q3: Is the thickness tolerance strictly defined, and what does it imply?
A3: Yes, the 0.525 mm thickness is maintained within tight tolerance limits to ensure dimensional compatibility with semiconductor processing tools. This strict control minimises variations that could affect device performance during high-precision fabrication.

Additional Information

Sapphire substrates, composed of crystalline Al2O3, are extensively used in various industrial and research applications due to their excellent thermal, electrical, and chemical properties. Their inherent mechanical strength and high melting point make them suitable for high-temperature processes. The R-plane orientation specifically contributes to improved surface characteristics, which are essential in processes such as epitaxial growth and advanced semiconductor device fabrication.

In the broader context of materials science, the processing of sapphire wafers involves rigorous quality control measures. Detailed characterisation using advanced microscopy and interferometry establishes the baseline for performance in complex assemblies. Researchers and engineers benefit from understanding these parameters to optimise integration into both experimental and production environments.