AL10288 Sapphire Wafer Al2O3 R Plane Dia. 3 inch x 0.5 mm 45° off C-axis

Sapphire Wafer Al2O3 R Plane 3” Dia x0.5 mm 45° off C-axis Description

The Sapphire Wafer Al2O3 R Plane wafer is manufactured from high-purity aluminium oxide (Al2O3) with a defined 45° counter-clockwise orientation from the projection of the C-axis onto the R-plane. The 3-inch diameter and 0.5 mm thickness meet standard semiconductor processing requirements. This orientation enhances uniformity in lattice structure and supports precise device fabrication while reducing defect incidences during high-temperature processing.

Sapphire Wafer Al2O3 R Plane 3” Dia x0.5 mm 45° off C-axis Applications

Electronics and Semiconductors
- Used as a substrate in integrated circuits to achieve controlled electron pathways by leveraging its precise R-plane alignment.
- Applied as a base for RF components to enhance dielectric stability by utilising its high-purity Al2O3 composition.

Industrial and Sensor Systems
- Serves as a support in high-temperature sensor modules to maintain dimensional stability by capitalising on Al2O3’s thermal resilience.
- Frequently used in optoelectronic devices to improve optical clarity by ensuring a low-defect, smooth crystalline surface.

Sapphire Wafer Al2O3 R Plane 3” Dia x0.5 mm 45° off C-axis Packing

The wafer is packaged in an anti-static, foam-lined container that shields against mechanical shock and contamination. It is sealed in a dust-free pouch with cushioning layers to preserve surface integrity. Storage requires a temperature-controlled, low-humidity environment to safeguard against oxidation. Custom packaging options, including compartmentalised trays and specialised labelling, are available to meet specific handling protocols.

Frequently Asked Questions

Q1: How does the specific R-plane orientation influence device processing?
A1: The 45° counter-clockwise offset from the C-axis projection provides a consistent crystalline lattice that improves lithography precision and etching uniformity. This alignment reduces anomaly risks during device integration, helping maintain process consistency.

Q2: What quality control methods are used to assess material purity and structure?
A2: The material undergoes high-resolution X-ray diffraction and scanning electron microscopy analysis. These methods assess crystalline orientation and detect minor defects, ensuring the wafer’s structural properties meet stringent process requirements.

Q3: How should the wafer be handled to maintain its surface quality?
A3: Handling should be performed in a cleanroom environment using anti-static tools. The wafer must be stored in its sealed, protective packaging under temperature-controlled, low-humidity conditions to prevent surface contamination and mechanical damage.

Additional Information

Aluminium oxide (Al2O3) is widely utilised due to its high thermal stability, hardness, and chemical inertness. Its crystalline structure plays a critical role in determining the physical characteristics required for advanced semiconductor and optoelectronic applications.

Understanding the impact of crystallographic orientation on substrate behaviour is essential for optimising device performance. Research in this area continuously explores the balance between defect minimisation and precise alignment, directly influencing yield and functionality in high-tech production environments.