AL10290 Sapphire Wafer Al2O3 R Plane Dia. 1 inch x 0.5 mm

Sapphire Wafer Al2O3 R Plane Dia. 1 inch x 0.5 mm Description

Sapphire Wafer Al2O3 R Plane Dia. 1 inch x 0.5 mm is an alumina (Al2O3) substrate with a defined R-plane orientation, measuring 1 inch in diameter and 0.5 mm in thickness. The substrate’s controlled crystallinity and smooth finish allow for improved epitaxial film deposition in semiconductor processes. Its chemical inertness and thermal stability make it suitable for demanding device fabrication environments and precise analytical applications.

Sapphire Wafer Al2O3 R Plane Dia. 1 inch x 0.5 mm Applications

Electronics and Semiconductor Applications
- Used as an epitaxial growth substrate in LED manufacturing to achieve uniform film deposition by utilising its atomically smooth R-plane surface.
- Applied as an insulator in high-frequency circuits to reduce parasitic effects by utilising its high dielectric strength.

Optoelectronic and Industrial Applications
- Serves as a base for optical devices to enhance light transmission by taking advantage of its low optical absorption.
- Frequently used as a mounting substrate for sensor arrays to maintain performance stability through its thermal and chemical inertness.

Sapphire Wafer Al2O3 R Plane Dia. 1 inch x 0.5 mm Packing

Sapphire wafers are packaged in anti-static, foam-lined carriers to shield against mechanical damage and contamination. They are stored in clean, dry, temperature-controlled conditions to preserve surface quality. Each unit is sealed in low-particulate materials with options for customised labelling and compartmentalisation. This packaging approach minimises any risk of surface degradation during handling and storage.

Frequently Asked Questions

Q1: How does the R-plane orientation influence the wafer’s performance in semiconductor applications?
A1: The R-plane orientation delivers a specific surface morphology that enhances epitaxial layer uniformity and minimises defect propagation during film deposition, aiding in precise semiconductor device fabrication.

Q2: What storage conditions are recommended for maintaining the quality of these sapphire wafers?
A2: It is advisable to store these wafers in a clean, dry, and temperature-controlled environment. Protection from mechanical stress and particulate contamination is essential to maintain their surface integrity.

Q3: Can these sapphire wafers be customised for specific production processes?
A3: Yes, customisation options such as varying diameters, thicknesses, or polishing standards are available through consultation. Specific requirements can be addressed to match particular fabrication or research needs.

Additional Information

Sapphire substrates, composed of high-purity alumina (Al2O3), are valued in materials science for their excellent chemical and thermal stability. Their unique crystal orientations contribute to specific surface characteristics, which are critical for semiconductor and optoelectronic applications. Advanced fabrication techniques have refined the production process to meet evolving industry demands.

In research and production settings, understanding the interplay between crystal structure and device performance is imperative. Sapphire wafers serve as a consistent platform for exploring material interactions in high-temperature and chemically aggressive environments, providing an essential basis for both experimental and industrial advancements in electronics and photonics.