AL10293 Sapphire Wafer Al2O3 A plane (11-20) 100 mm x0.5 mm

Sapphire Wafer Al2O3 A plane (11-20) 100 mm x0.5 mm Description

Sapphire Wafer Al2O3 A plane (11-20) 100 mm x0.5 mm is fabricated from high-purity Al2O3 with a specified (11-20) crystallographic orientation. The 100 mm diameter and 0.5 mm thickness ensure compatibility with standard semiconductor processing equipment. Its chemical inertness minimises contamination risks during device fabrication. The material’s single-crystal structure with minimal dislocations is ideal for applications requiring high surface quality and controlled orientation.

Sapphire Wafer Al2O3 A plane (11-20) 100 mm x0.5 mm Applications

Electronics and Semiconductor Manufacturing
- Used as a substrate in LED and microelectronic device fabrication to achieve controlled heat dissipation by leveraging its high thermal conductivity.
- Applied as a base layer for epitaxial growth in semiconductor devices to improve layer uniformity by utilising its low lattice mismatch.

Optoelectronics
- Serves as a dielectric substrate in optical components to enhance light transmission by capitalising on its high transparency in the visible spectrum.
- Employed in sensor platforms to achieve stable electrical insulation by taking advantage of its robust chemical inertness.

Sapphire Wafer Al2O3 A plane (11-20) 100 mm x0.5 mm Packing

The wafer is packaged individually in static-dissipative, vacuum-sealed pouches to reduce particulate contamination and mechanical stress. Each unit is cushioned within anti-vibration foam inserts and stored in rigid, temperature-controlled containers. This packaging method maintains product integrity against environmental fluctuations. Custom labelling and compartmentalised packaging are available to comply with specific laboratory or industrial standards.

Frequently Asked Questions

Q1: What factors influence the structural integrity of the sapphire wafer during processing?
A1: The wafer’s integrity relies on the precise control of crystal growth conditions and post-fabrication surface treatments. SEM and profilometry analysis are essential to detect micro-cracks and variations in thickness that may affect performance in semiconductor device fabrication.

Q2: How does the (11-20) orientation affect substrate performance in high-temperature processes?
A2: The (11-20) orientation exhibits defined thermal properties that aid in heat dissipation, reducing thermal stress during high-temperature processing. This controlled orientation supports a uniform temperature distribution in critical applications.

Q3: Can the wafer be customised to integrate with specific fabrication workflows?
A3: Customisation options include modifications in wafer dimensions, thickness, and optional surface polishing. These adjustments can be aligned with specific equipment requirements, ensuring compatibility with diverse semiconductor processing protocols.

Additional Information

Sapphire substrates, composed of Al2O3, are valued in materials science for their high chemical stability and exceptional thermal properties. Their single-crystal structure minimises defects, which is crucial for achieving superior device performance in semiconductor and optoelectronic applications. Researchers continue to study these substrates to enhance integration with emerging technologies.

The controlled crystallographic orientation and consistent surface quality of sapphire wafers are fundamental in ensuring reproducible material behaviour during high-precision fabrication processes. Technical characterisations, including X-ray diffraction and electron microscopy, support the ongoing improvement of these substrates for advanced industrial applications.