AL10295 Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx1000 nm

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx1000 nm Description

This substrate features an epitaxially grown Aluminium Nitride layer on a sapphire (Al2O3) base with a (0001) orientation. The 10x10 mm dimensions ensure compatibility with standard semiconductor processing equipment, while the 1000 nm film thickness plays a crucial role in dielectric performance and thermal management. The undoped nature of the film minimises impurity interference, optimising its use in high-frequency circuits and electronic component fabrication.

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx1000 nm Applications

Electronics Applications
- Used as an insulating layer in RF circuits to achieve reduced parasitic capacitance by leveraging the film’s controlled crystalline alignment.
- Applied as a dielectric barrier in power electronics to mitigate thermal stress by utilising its high thermal conductivity.

Industrial Applications
- Used as a substrate component in sensor modules to ensure stable signal output by taking advantage of its uniform film morphology.
- Applied in high-temperature process monitoring systems to maintain electrical isolation by leveraging its chemical inertness.

Undoped Aluminium Nitride AlN Template on Sapphire Al2O3 (0001) 10x10 mmx1000 nm Packing

The substrate is packaged in static-dissipative carriers and cushioned with foam inserts to mitigate mechanical shock. It is sealed in a moisture barrier bag to prevent contamination during transit. Storage in a clean, temperature-controlled environment is recommended to maintain material integrity. Custom packaging options with additional anti-contamination and cushioning measures are available upon request.

Frequently Asked Questions

Q1: How does the epitaxial deposition affect the substrate’s performance?
A1: Epitaxial deposition establishes a uniform crystalline structure that enhances the dielectric consistency and thermal conductivity essential in semiconductor devices. This controlled growth minimises defect density and facilitates precise integration with other electronic components.

Q2: What special handling procedures are recommended for this substrate?
A2: The substrate requires handling in a clean room environment with anti-static precautions. It should be stored under controlled temperature and humidity to prevent degradation of the AlN film and maintain the integrity of the sapphire base.

Q3: Can the substrate undergo additional post-processing modifications?
A3: Yes, the substrate can be customised post-deposition for specific device integrations such as thinning, polishing, or patterning. These modifications are performed under strict clean room protocols to preserve the material’s inherent properties.

Additional Information

Aluminium Nitride (AlN) ceramic substrates are widely used in applications requiring high thermal conductivity and electrical insulation. The undoped nature of the AlN film minimises impurity scattering, which is crucial in achieving consistent material behaviour under high power and high frequency conditions.

The integration of AlN on sapphire (Al2O3) combines the thermal management properties of aluminium nitride with the smooth, stable surface provided by sapphire. This combination supports advanced semiconductor processes, particularly in areas demanding low defect density and high structural integrity for efficient device performance.