AL10301 One Side Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000 nm

One Side Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000 nm Description

The template consists of a single-sided polished AlN film deposited on a (0001) sapphire substrate. The 2-inch by 0.5 mm dimensions ensure compatibility with standard semiconductor processing tools, while the uniform 1000 nm film thickness provides defined dielectric properties. The one side polished surface minimises scattering, promoting efficient subsequent layer deposition for high-performance electronic and opto-electronic systems.

One Side Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000 nm Applications

Electronics
- Used as a substrate in RF circuits to achieve reduced dielectric loss by leveraging AlN's high thermal conductivity, resulting in stable performance under high-frequency operations.
- Applied as a base for high-speed semiconductor devices to mitigate thermal buildup through efficient heat dissipation, ensuring operational stability.

Optoelectronics
- Used as a platform in LED structures to enhance photon extraction by exploiting the smooth, one side polished surface, which minimises surface scattering.
- Employed in laser diode fabrication to produce a uniform interface that supports consistent light emission by reducing interface irregularities.

One Side Polished Aluminium Nitride Template on Sapphire (0001) 2 inch x 0.5 mm AlN Film 1000 nm Packing

The templates are packaged in anti-static, cleanroom-grade carriers with foam inserts to minimise mechanical impact. They are sealed in moisture barrier bags to restrict contamination and are stored under controlled, low-humidity conditions. Custom packaging options, including vacuum-sealed containers and specialised labelling, are available to comply with precise storage and transportation requirements.

Frequently Asked Questions

Q1: How is the surface quality verified for these AlN templates?
A1: The surface quality is verified using interferometry and scanning electron microscopy to ensure uniformity and minimal defects. These techniques confirm that the one side polishing process meets the stringent criteria necessary for advanced semiconductor processing.

Q2: What thermal management benefits does the AlN film offer in device integration?
A2: The intrinsic high thermal conductivity of AlN facilitates efficient heat dissipation during device operation. This property reduces thermal gradients, thereby preventing localised overheating and supporting consistent performance in high power applications.

Q3: Can the substrate dimensions be custom modified for specific applications?
A3: Yes, substrate dimensions can be customised to meet specific process requirements. Tailored cutting and shaping processes are available to align with precise equipment specifications and application needs, ensuring compatibility with various device architectures.

Additional Information

Aluminium Nitride is a ceramic material known for its high thermal conductivity and stable dielectric properties, making it valuable for high-temperature electronic applications. The integration of an AlN film on a sapphire substrate allows for improved lattice matching and thermal management, which are critical in advanced semiconductor device fabrication.

The use of a one side polished surface enhances subsequent layer deposition by reducing surface roughness and scattering effects. This processing method supports applications where high interface quality is essential, and the combination of AlN and sapphire has been extensively researched for its potential to support electronic and opto-electronic devices.