AL10310 Undoped Aluminium Nitride AlN Template on 4 inch Silicon 4 inch x 500 nm

Undoped Aluminium Nitride AlN Template on 4 inch Silicon 4 inch x 500 nm Description

The Undoped Aluminium Nitride AlN Template on 4" Silicon (Si <111> P type B-doped) is deposited as a 500 nm film onto a 4-inch silicon wafer with controlled p-type B-doping. Comprising AlN and Si, the structure offers high thermal conductivity and electrical insulation, critical for semiconductor devices. Its uniform film aids in minimising lattice mismatches and thermal strain during device fabrication, ensuring compatibility with standard processing equipment.

Undoped Aluminium Nitride AlN Template on 4 inch Silicon 4 inch x 500 nm Applications

1.       Electronics and Semiconductor Applications
   - Use as a dielectric or barrier layer in high-frequency transistors to control leakage currents by leveraging the film’s electrical insulation and crystallographic alignment.
   - Applied as an intermediate layer in RF devices to reduce parasitic capacitance through its uniform 500 nm thickness.

2.       Industrial and Sensing Applications
   - Used as a substrate in sensor fabrication to maintain thermal stability by leveraging the high thermal conductivity of AlN.
   - Frequently employed in microelectronic packaging to mitigate thermal stresses, capitalising on the material’s controlled interface properties.

Undoped Aluminium Nitride AlN Template on 4 inch Silicon 4 inch x 500 nm Packing

The substrate is packaged in an anti-static foam-lined container within a sealed polythene pouch to prevent contamination and mechanical damage. It should be stored in a dry, temperature-controlled environment to maintain its film consistency. Additional customisation options, such as vacuum sealing and tailored compartmentalisation, are available to meet specific handling requirements for semiconductor processing.

Frequently Asked Questions

Q1: What quality control measures are implemented during production?
A1: SAM uses scanning electron microscopy and profilometry to verify film uniformity and identify defects, ensuring that processing variations remain within acceptable limits for semiconductor applications.

Q2: How does the P type B-doping influence substrate performance?
A2: The controlled B-doping in the silicon substrate improves electrical characteristics and facilitates uniform integration with the AlN film, which is essential for consistent device performance under semiconductor process conditions.

Q3: What storage conditions are recommended to preserve substrate integrity?
A3: The substrate should be stored in a low-humidity, temperature-stable environment using static-free, anti-contamination packaging to minimise exposure to mechanical stresses and environmental contaminants.

Additional Information

Aluminium Nitride (AlN) is widely recognised for its high thermal conductivity and electrical insulation properties, making it suitable for advanced electronic applications. The combination of AlN with a silicon substrate creates a platform that supports efficient heat dissipation and minimises thermal strain during device operation.

In semiconductor manufacturing, the control of crystalline orientation and film uniformity is critical to device reliability. The integration of undoped AlN on a silicon wafer with a defined <111> orientation ensures that the resulting substrate can withstand rigorous processing steps without compromising the structural integrity required for high-performance electronic devices.