BN10347 Synthetic Hexagonal Boron Nitride (hBN) Single Crystal Substrate 0.5-1.0 mm

Synthetic Hexagonal Boron Nitride (hBN) Single Crystal Substrate 0.5-1.0 mm Description

This substrate, composed of hexagonal boron nitride (hBN), features a single crystal structure with a thickness ranging from 0.5 to 1.0 mm. The material exhibits high chemical resistance and an atomically flat surface, making it suitable for experiments and devices where substrate uniformity is critical. Its structure minimises scattering and degradation, thereby maintaining stability in processes that demand inert and smooth surfaces.

Synthetic Hexagonal Boron Nitride (hBN) Single Crystal Substrate 0.5-1.0 mm Applications

1.      
Electronics and Semiconductor Applications
   - Used as an insulating layer in 2D material device fabrication to achieve minimised charge trapping by leveraging its chemically inert and atomically flat surface.
   - Applied as a substrate in graphene-based transistors to attain uniform device performance through its stable, high-purity crystalline properties.

2.      
Industrial and Research Applications
   - Serves as a thermal management component in high-temperature sensor assemblies to achieve stable performance by utilising its high heat resistance.
   - Frequently used in optical and spectroscopic setups to ensure minimal light scattering, enabling accurate measurements and analysis.

3.      
Advanced Materials Processing
   - Employed as a platform for epitaxial growth in advanced semiconductor research to permit defect-minimised layers by leveraging its superior surface uniformity.
   - Applied in surface engineering to test novel coatings, achieving consistent deposition outcomes with its chemically inert base.

Synthetic Hexagonal Boron Nitride (hBN) Single Crystal Substrate 0.5-1.0 mm Packing

The substrate is individually secured in an anti-static, foam-lined package to prevent physical damage and contamination. It is stored in controlled, low-humidity conditions to maintain its crystalline integrity. The packaging includes cushioning layers and a sealed barrier to minimise exposure to environmental contaminants. Customised packaging options are available on request, ensuring optimal protection during transport and storage.

Frequently Asked Questions

Q1: How does the substrate’s uniform thickness impact its performance in device fabrication?
A1: The controlled thickness of 0.5 to 1.0 mm ensures high planarity and minimal variation, which is critical for achieving consistent layer deposition and device integration in high-precision semiconductor fabrication.

Q2: What measures are taken to ensure the surface quality of the hBN substrate?
A2: The substrate undergoes inspection through high-resolution microscopy and interferometry. These methods verify the atomic flatness and low defect density, ensuring that the surface meets stringent requirements for advanced material research.

Q3: Can the substrate handle high-temperature processing during device fabrication?
A3: Yes, owing to the inherent thermal stability of hBN, the substrate maintains its structural integrity under high-temperature conditions, which is essential for processes involving thermal annealing or deposition techniques.

Additional Information

Hexagonal boron nitride (hBN) is recognised for its layered structure, which imparts unique thermal and chemical resistance properties. It is frequently compared to graphite due to its similar crystalline arrangement but offers electrical insulation instead of conductivity. These traits make hBN an essential material in advanced electronic and composite applications.

Beyond its application in substrates, hBN’s high resistance to chemical attack and thermal stability render it a candidate for use in extreme environments. Its properties facilitate experimentation in materials science, particularly in fields that require interfaces with minimal interference and robust performance under diverse operating conditions.