CY10334 Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 3x3x0.25 mm

Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 3x3x0.25 mm Description

Manufactured via chemical vapour deposition, this diamond single crystal substrate features a (100) crystallographic orientation and precise dimensions of 3x3 mm with a 0.25 mm thickness. The substrate’s high thermal conductivity and chemical inertness support its use in semiconductor and optoelectronic processes. Its uniform surface and structural integrity reduce signal interference, making it an effective base for advanced device fabrication and high-performance component integration.

Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 3x3x0.25 mm Applications

1.       Electronics Applications
   - Use as a substrate in RF devices to achieve efficient heat dissipation by leveraging diamond’s high thermal conductivity.
   - Applied as an insulating layer in integrated circuits to reduce electrical noise by capitalising on the chemical inertness of diamond.

2.       Industrial Applications
   - Used as a support component in precision sensors to enhance signal stability by utilising the substrate’s uniform (100) crystal structure.
   - Employed in high-end machining systems to ensure dimensional stability under thermal stress by leveraging the inherent thermal properties of diamond.

Chemical Vapor Deposition Diamond Single Crystal Substrate (100) 3x3x0.25 mm Packing

The substrate is packaged in an anti-static, custom-moulded plastic case with inert cushioning materials to prevent mechanical impact and contamination. Each unit is sealed in a moisture barrier pouch and accompanied by desiccant packs. The packaging instructions call for storage in a dry, temperature-controlled environment. Custom packaging options, including compartmentalisation and additional labelling, are available per specific handling requirements.

Frequently Asked Questions

Q1: How does the CVD process influence the crystal quality of the substrate?
A1: The CVD process allows for controlled deposition of carbon atoms, producing a uniform (100) crystal orientation. In-line monitoring, including Raman and SEM analysis, helps ensure minimal structural defects, which is critical for semiconductor applications.

Q2: What measures are taken to prevent substrate contamination during production?
A2: The production process includes cleanroom conditions and particle filtration systems. Post-deposition, the substrate is inspected under high magnification to identify any surface anomalies, ensuring that contaminants do not affect its integration into device fabrication.

Q3: How do the substrate’s dimensions support semiconductor processing?
A3: The precise 3x3 mm size and 0.25 mm thickness ensure compatibility with existing semiconductor equipment and processing standards. This dimensional control is vital for achieving consistent integration in microelectronic and optoelectronic assemblies.

Additional Information

Diamond substrates produced by chemical vapour deposition find extensive use in semiconductor and optoelectronic industries. The high thermal conductivity and chemical inertness of diamond make it a preferable material for managing heat in high-power applications and for providing a stable platform for device fabrication.

Advanced deposition techniques and rigorous quality monitoring have refined the production of CVD diamond substrates. The ability to control crystal orientation and reduce defects supports their integration into systems requiring precise thermal management and electrical insulation, expanding their role in emerging technologies and research applications.