CY11155 Iridium (Ir) Coated Silicon Wafer

Iridium (Ir) Coated Silicon Wafer Description

Iridium (Ir) Coated Silicon Wafer is a silicon substrate with an iridium layer applied via physical vapour deposition techniques. The thin metal film serves as a diffusion barrier, preventing oxidation during high-temperature processing. Standard wafer dimensions ensure compatibility with common semiconductor fabrication equipment. The presence of iridium enhances thermal stability and minimises contamination risks during device manufacturing.

Iridium (Ir) Coated Silicon Wafer Characteristics

*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Iridium (Ir) Coated Silicon Wafer Applications

Electronics and Semiconductor
- Used as a diffusion barrier in CMOS processing to limit oxidation by leveraging the iridium film; this maintains substrate integrity during thermal treatments.
- Applied as a substrate in microelectronic sensor fabrication to ensure surface stability; the coating minimises contamination risks and supports consistent process outcomes.

Research and Development
- Utilised for investigating thin film properties in experimental setups by offering a uniform coating; this facilitates reproducible and accurate surface analysis.
- Frequently used in material science studies to evaluate metal-semiconductor interfaces, supporting improved design of semiconductor devices.

Iridium (Ir) Coated Silicon Wafer Packing

The Iridium (Ir) Coated Silicon Wafers are individually sealed in anti-static pouches and secured within rigid foam carriers to reduce mechanical shock and particulate contamination. They are stored in temperature- and humidity-controlled environments to maintain coating integrity. Customised packaging options, including compartmentalised trays and specific labelling, are available to accommodate process-specific handling requirements.

Additional Information

Silicon wafers form the cornerstone of modern semiconductor fabrication, serving as primary substrates for integrated circuits and advanced electronic components. The application of thin metal coatings, such as iridium, enhances these substrates by providing critical barriers against diffusion and oxidation during high-temperature processing. This integration of metal films and silicon substrates is a fundamental aspect of material science in semiconductor manufacturing.

Research in thin film deposition continues to evolve, with techniques such as sputter deposition offering precise control over film characteristics. Such advancements contribute to improved device performance and scalability in various industrial applications, emphasising the importance of material compatibility and process optimisation in electronics and materials engineering.