CY11157 Titanium Nitride (TiN) Coated Silicon Wafer

Titanium Nitride (TiN) Coated Silicon Wafer Description

Titanium Nitride (TiN) Coated Silicon Wafer is a silicon substrate that features a uniformly deposited TiN film via sputtering techniques. The TiN layer acts as a barrier against oxidation and contamination while providing a conductive surface for device integration. Its controlled film thickness and homogeneity are crucial for minimising defects during subsequent semiconductor processing steps, ensuring compatibility with standard fabrication equipment.

Titanium Nitride (TiN) Coated Silicon Wafer Characteristics

*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.

Titanium Nitride (TiN) Coated Silicon Wafer Applications

1.       Electronics and Semiconductor Manufacturing
- Used as an interconnect layer in integrated circuits to achieve low-resistance pathways by leveraging the conductive properties of TiN.
- Applied as a diffusion barrier in metal-silicon structures to prevent intermixing and degradation during high-temperature processing.

2.       Surface Protection and Barrier Layers
- Serves as a protective coating in microelectromechanical systems (MEMS) to extend device life by reducing oxidation and wear.
- Used in sensor devices where the chemically inert TiN layer minimises contamination and increases device stability.

Titanium Nitride (TiN) Coated Silicon Wafer Packaging

The wafers are packaged in antistatic trays and sealed within laminated moisture barrier bags to avoid contamination and mechanical damage during transit. Storage should be in a clean, dry, and temperature-controlled environment to maintain the integrity of the TiN coating. Customised packaging options are available to suit specific handling requirements and ensure product protection from environmental influences.

Additional Information

Titanium Nitride coatings have been widely studied for their chemical inertness and electrical conductivity in semiconductor applications. The controlled deposition process not only enhances surface durability but also improves electrical contact reliability. Advances in coating technology have allowed researchers to finely tune film properties, benefitting various high-tech manufacturing processes.

Understanding the interplay between coating uniformity and substrate performance is crucial in semiconductor fabrication. The integration of TiN layers with silicon substrates demonstrates the importance of meticulous process control in achieving desired outcomes for both active and passive device components.