Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm Description
Crafted from a single-crystal Al₂O₃ structure, this C-plane (0001) sapphire substrate is among the most effective solutions for high-performance devices. With a diameter of 50.8 mm and thickness of 0.5 mm, it offers exceptional mechanical strength, chemical inertness, and outstanding thermal stability. These characteristics render it suitable for advanced applications such as LED epitaxy, microelectronics, and optical systems. Its elevated dielectric constant and low dielectric losses facilitate high-frequency operations.
Adhering to strict industry standards, each substrate undergoes rigorous testing to ensure consistent quality and minimal surface defects. Polished surfaces guarantee uniform epitaxial growth and easy integration into complex device structures. Rely on this Al₂O₃ C-plane sapphire wafer for reliable performance, enhanced device efficiency, and durability in demanding environments.
Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm Applications
The Aluminium Oxide Sapphire Crystal Substrate (Al2O3) C-plane (0001) Dia. 50.8 mm x 0.5 mm is highly valued for its optical clarity, significant hardness, and superior thermal stability. These traits make it an essential material across numerous industries, supporting advanced research and commercial product development. Its capacity to withstand harsh environments while maintaining optical transparency is especially valuable for devices requiring reliable performance under demanding conditions.
1. Industrial Applications
· Protective windows for high-temperature equipment, leveraging the substrate's thermal stability
· Wear-resistant components used in harsh industrial settings, capitalising on sapphire’s hardness
2. Research Applications
· Substrate for semiconductor research, providing a stable platform for epitaxial growth and advanced material studies
· Optical component testbeds in spectroscopy experiments, benefiting from the crystal’s high transmission properties
3. Commercial Applications
· Scratch-resistant watch crystals, utilising sapphire’s mechanical strength
· High-end camera lenses, harnessing its clarity and low birefringence
Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm Packaging
Each Al2O3 C-plane (0001) sapphire substrate (50.8 mm diameter x 0.5 mm thick) is encased in anti-static, vacuum-sealed packaging with foam cushioning to prevent mechanical damage. Substrates should be stored in a clean, low-humidity environment to minimise contamination. Manufacturers utilise sealed plastic containers with desiccant packs for optimal dryness. Customised labelling options and packaging configurations are available to meet specific handling needs, ensuring each substrate remains pristine for precise application.
Packaging: Vacuum sealed, Wooden Box, or Customised.
Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm FAQs
Q1: What are the key material properties of Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm?
A1: Aluminium Oxide (Al2O3) sapphire substrates exhibit exceptional hardness (9 on the Mohs scale), high thermal conductivity (25–35 W/mK), and excellent chemical stability. The C-plane (0001) orientation is favoured for epitaxial growth, ensuring a well-defined surface lattice. With a low dielectric constant and superior optical transmission, these substrates are widely used in microelectronic and optoelectronic applications. The diameter of 50.8 mm and thickness of 0.5 mm comply with industry-standard wafer requirements.
Q2: How should this product be handled and stored?
A2: Due to its brittleness and precision surfaces, the substrate should be handled in a cleanroom environment using lint-free gloves and non-abrasive tools. To prevent scratching or contamination, store each wafer in a protective carrier or cassette, separated by soft interleaving materials. Maintain stable temperature and humidity levels, and avoid direct contact with bare hands or harsh chemicals to preserve crystal integrity.
Q3: Which quality standards and certifications apply to Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001) Dia. 50.8 mm x 0.5 mm?
A3: For semiconductor-grade sapphire wafers, relevant quality systems typically include ISO 9001 for overall manufacturing and quality management, as well as ISO 14001 for environmental practices. In some cases, producers may adhere to SEMI standards pertaining to wafer geometry, flatness, and surface quality. Many suppliers also perform rigorous in-house metrology, such as X-ray diffraction, surface roughness measurement, and defect inspections, ensuring these substrates meet strict microelectronic and optoelectronic specifications.
Related Information
1. Manufacturing Process
The manufacturing process for an Aluminium Oxide Sapphire Crystal Substrate, Al2O3 C-Plane (0001), Dia. 50.8 mm x 0.5 mm begins with the formation of a high-purity sapphire ingot. Through carefully controlled techniques, often including the Verneuil or Czochralski method, the crystal grows to minimise structural imperfections and impurities. Once the ingot is formed, it is precisely cut into discs of the required 50.8 mm diameter and undergoes thorough surface grinding to achieve an optimal thickness of 0.5 mm.
Upon completion of the shaping stages, the substrate undergoes a meticulous lapping and polishing sequence to create a flawless surface. Using proprietary polishing compounds and advanced equipment, manufacturers ensure minimal surface roughness, which is crucial for subsequent device fabrication. The polished substrate then undergoes testing to confirm crystallographic orientation along the C-plane (0001), thereby guaranteeing uniformity and consistency across production batches.
2. Applications in Advanced Industries
Optoelectronics, microelectronics, and precision instrumentation frequently rely on this type of Aluminium Oxide Sapphire Crystal Substrate to achieve device performance. Its structural integrity and crystalline alignment allow for minimal strain during epitaxial growth of semiconductors such as gallium nitride (GaN). This reliability makes the substrate useful in the production of radio devices and LEDs with improved efficiency and heat management.
During wafer-level processing, the substrate’s thermal stability and chemical inertness significantly contribute to device reliability. In power electronics, its capacity to withstand elevated temperatures without warping or degrading supports prolonged operational lifespans. Additionally, the 50.8 mm diameter and 0.5 mm thickness provide compatibility with industry-standard processing equipment, further expanding its application in modern nanotechnology and photonics research.
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