CY8299 Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm Description

Aluminium Oxide (Al₂O₃) M-plane sapphire substrates are known for their excellent thermal conductivity, chemical stability, and high mechanical strength. Measuring 10 × 10 × 0.5 mm, these substrates exhibit a defect-free surface finish that supports precise epitaxial growth of advanced materials such as III-V compounds. The M-plane orientation offers specific advantages, including reduced lattice mismatch and lower stress during epitaxy, making it a preferred choice for optoelectronic devices, LEDs, and high-temperature sensors.

Manufactured under stringent quality standards, each substrate undergoes rigorous inspections to ensure dimensional accuracy and consistent surface quality. These substrates deliver long-term reliability in exceptionally demanding environments and enhance device performance through minimised defect densities. Whether used in research or commercial applications, Al₂O₃ M-plane sapphire substrates provide the foundation needed for next-generation technologies.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm Applications

Aluminium Oxide Sapphire Crystal Substrate (Al2O3 M-Plane) is known for its chemical stability, high thermal conductivity, and superior mechanical strength. This 10 x 10 x 0.5 mm substrate provides a base for numerous applications in advanced technologies. Additionally, its crystalline quality and optical transparency make it ideal for research, industrial, and commercial uses requiring reliable performance.

1. Industrial Applications

·         High-Power LED Manufacturing: The substrate’s excellent thermal conductivity and durability support efficient heat dissipation, ensuring stable illumination.

·         High-Temperature Reactor Components: The crystal’s chemical inertness and mechanical robustness enable it to withstand harsh process conditions.

2. Research Applications

·         Epitaxial Growth Studies: The substrate’s uniform crystalline structure helps researchers investigate novel material layers and optimise thin-film deposition.

·         Optical Sensor Development: Its optical clarity and surface stability enable precise detection and measurement under various experimental conditions.

3. Commercial Applications

·         Laser Diode Packaging: The substrate’s thermal management and stability preserve the longevity of sensitive diode components.

·         Wear-Resistant Watch Crystals: Its hardness and scratch resistance provide lasting clarity and durability in consumer electronics.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm Packaging

Each Aluminium Oxide Sapphire Crystal Substrate (Al2O3, M-plane) 10 × 10 × 0.5 mm is packaged in an anti-static wafer carrier with foam inserts to protect from mechanical damage. A sealed, dust-free pouch provides additional contamination control. Store the substrate in a temperature- and humidity-controlled environment to preserve purity. Custom thicknesses, edges, or shapes are available for varied research and manufacturing requirements.

Packaging: Vacuum sealed, Wooden Box, or Custom.

Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm FAQs

Q1: What are the key material properties of Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm ?

A1: This substrate is derived from a single-crystal corundum structure featuring an M-plane orientation that ensures specific anisotropic properties beneficial for device fabrication. It offers high thermal conductivity, chemical inertness, and mechanical strength with a Mohs hardness of 9. The material provides optical transmission from ultraviolet to mid-infrared and minimal lattice mismatch for nitride-based epitaxy. It has low surface roughness and precise thickness tolerance.

Q2: How should this product be handled and stored?

A2: It is crucial to handle each substrate with clean, lint-free gloves to prevent contamination or scratches on the mirror-like surface. Use dedicated storage containers with cushioning inserts to avoid chipping along the edges. Maintain a cleanroom or dust-controlled environment with stable temperature and humidity. Always use non-abrasive materials when cleaning, and avoid sudden temperature shifts that could induce thermal stress.

Q3: Which quality standards and certifications apply to Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm ?

A3: Aluminium Oxide Sapphire Crystal Substrates typically comply with ISO 9001 guidelines for quality management, ensuring traceability and consistent performance. These often meet SEMI standards for wafer dimension and flatness tolerances and adhere to defined surface quality specifications such as minimal scratches and pits. Some suppliers provide certified metrology data, confirming substrate orientation accuracy, thickness uniformity, and acceptable crystal defect levels for advanced device applications.

Related Information

1. Manufacturing Process

Precision is employed to achieve the high purity of each Aluminium Oxide Sapphire Crystal Substrate, Al2O3 M-Plane 10 x 10 x 0.5 mm. Advanced crystal growth techniques, such as the Kyropoulos method, ensure uniform crystal development while allowing for optimal control over defect formation. During this stage, strict parameters are monitored to ensure the M-plane orientation remains stable, which is critical for maintaining consistent optical and mechanical properties across each wafer.

Emphasising quality and consistency, the substrate is carefully sliced and polished to achieve the 10 x 10 x 0.5 mm dimensions, maintaining uniform thickness and surface flatness. Multiple polishing steps with progressively finer abrasives help attain an ultra-smooth finish, minimising surface defects that could interfere with downstream processes. The end result is a substrate that meets rigorous criteria for academic and industrial research settings, emphasising reliability for high-end device fabrication.

2. Applications in Advanced Industries

Targeted towards industries that require temperature tolerance and chemical stability, this M-plane sapphire crystal substrate finds use in microelectronics and optoelectronics. It provides a platform for epitaxial growth of compound semiconductors and other thin films, enabling the creation of efficient integrated circuits and sensors. Its excellent dielectric properties further facilitate the development of photonic devices where signal loss is essential.

Technologies in aerospace and defence also rely on the precise characteristics of M-plane substrates for thermal management and radiation resistance. The 10 x 10 x 0.5 mm form factor ensures compatibility with a range of fabrication equipment, enabling streamlined workflows. Consequently, this sapphire crystal substrate remains indispensable for applications in communications, high-power electronics, and precision optical systems.