CY8543 Silicon (Si) Crystal Substrate (110) Dia. 1 inch

Silicon (Si) Crystal Substrate (110) Dia. 1 inch Description

Our Silicon (Si) Crystal Substrate (110) with a 1-inch diameter is designed to offer high crystalline quality and structural uniformity. The (110) orientation provides specific atomic arrangements that are favourable for applications in advanced microelectronics, photovoltaics, and MEMS research. With its high purity and low defect density, this substrate supports precise dopant control and minimal lattice strains, ensuring reliable performance and reproducible results in both experimental and production environments.

Manufactured under strict quality standards, each substrate undergoes rigorous inspection to verify surface flatness, thickness uniformity, and overall dimensional precision. This careful oversight guarantees optimal surface quality suitable for thin-film deposition, photolithography, and other fabrication processes. Whether you are exploring new device concepts or scaling up production, our Silicon (Si) Crystal Substrate (110) delivers consistent properties and dependable performance essential for technological advancements.

Silicon (Si) Crystal Substrate (110) Dia. 1 inch Applications

Silicon (Si) Crystal Substrate (110) Dia. 1 inch serves as a foundation for a range of methodologies. With its high purity, uniform crystalline structure, and precise orientation, it allows consistent performance across numerous fields. Leveraging these properties results in high thermal conductivity, electrical characteristics, and mechanical strength, making it essential for applications.

1. Industrial Applications

·        High-Performance Electronics: The (110) orientation ensures efficient carrier transport, ideal for power transistors.

·        Heat Spreaders: Exceptional thermal conductivity helps dissipate heat in demanding industrial settings.

2. Research Applications

·        Semiconductor Experimentation: Stable crystal orientation supports advanced doping and growth studies.

·        Photonics Advancements: Uniform substrate thickness aids in precise optical component design and testing.

3. Commercial Applications

·        Consumer Device Manufacturing: Uniformity and robustness contribute to reliable and long-lasting products.

·        Sensor Technologies: High purity ensures accurate signal detection and stable operation over time.

Silicon (Si) Crystal Substrate (110) Dia. 1 inch Packaging

Each 1-inch diameter (110) Silicon Crystal Substrate is individually sealed in a cleanroom-grade polyethylene bag with foam inserts for shock absorption. For best results, store in a controlled environment at 20–25°C, keeping humidity below 50%. Anti-contamination measures include double-bagging and minimal handling. Custom protective packaging, such as vacuum sealing and ESD shrouds, can be arranged upon request. Clear labeling with product specifications ensures traceability and efficient inventory management.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (110) Dia. 1 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (110) Dia. 1 inch?

A1: Silicon (Si) Crystal Substrate (110) Dia. 1 inch typically exhibits excellent mechanical strength, precise atomic arrangement, and consistent lattice parameters. With a (110) crystallographic orientation, it is favoured for microelectromechanical systems (MEMS) and specialised electronic devices requiring directional etching. Typical resistivity ranges from 1 to 20 Ω·cm, depending on doping type, ensuring stable conductivity. Its surface finish is smooth, with minimal roughness, allowing for high-quality device fabrication.

Q2: How should this product be handled and stored?

A2: Proper handling of the Silicon (Si) Crystal Substrate (110) Dia. 1 inch involves wearing cleanroom gloves to avoid contamination and holding the substrate by its edges to prevent scratches. It should be stored in a clean, static-free environment with controlled humidity and temperature. Avoid direct contact with hard surfaces and use padded containers for transport. Regular inspection and careful cleaning with approved solvents will maintain surface integrity.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (110) Dia. 1 inch?

A3: Silicon (Si) Crystal Substrate (110) Dia. 1 inch commonly meets ISO 9001 standards for quality management, ensuring consistent production and traceability. Additionally, many suppliers adhere to SEMI specifications for wafer geometry, flatness, and crystallographic orientation accuracy. RoHS compliance is often certified to confirm minimal hazardous substances. Regular QC checks and metrology processes are performed to validate thickness uniformity, resistivity, and defect density before product shipment.

Related Information

1. Manufacturing Process

Meticulous growth methods are employed to create the Silicon (Si) Crystal Substrate (110) Dia. 1 inch, ensuring its uniform lattice structure and stable orientation. These substrates often begin as high-purity silicon crystals grown through techniques such as the Czochralski process, where silicon is melted and then carefully pulled to form an ingot. The (110) orientation is maintained with precision throughout this procedure, contributing to the substrate’s consistent properties and dimensional accuracy.

Advanced slicing and polishing procedures follow, where wafers are cut from the ingot and machine-polished for optimal smoothness. During polishing, any irregularities or contaminants are thoroughly removed to yield a mirror-like surface with stringent flatness requirements. This attention to detail is vital for achieving minimal defects, which is critical when the substrate undergoes subsequent device fabrication steps in research and commercial environments.

2. Applications in Advanced Industries

Performance in microelectromechanical systems (MEMS), semiconductor lasers, and microprocessor fabrication makes the Silicon (Si) Crystal Substrate (110) Dia. 1 inch invaluable. Its well-defined crystalline orientation provides consistent characteristics in thermal management, electrical conductivity, and stress distribution, all of which are essential for electronic devices. The substrate’s diameter of one inch makes it particularly well-suited for specialised manufacturing environments or pilot-scale experiments focused on device engineering.

Targeted utilisation in sectors such as optoelectronics and sensor development arises from this substrate’s considerable reliability and dimensional accuracy. Its ability to maintain crystalline stability under a range of conditions helps researchers and manufacturers streamline their production process, reduce material waste, and increase output quality. This positions the Silicon (Si) Crystal Substrate (110) Dia. 1 inch as a pivotal component in driving forward technologies across multiple high-tech fields.