CY8544 Silicon (Si) Crystal Substrate (111) Dia. 1 inch

Silicon (Si) Crystal Substrate (111) Dia. 1 inch Description

Discover exceptional quality and reliability with our Silicon (Si) Crystal Substrate (111), designed with a 1-inch diameter for precision microelectronic and optoelectronic applications. Engineered using advanced single-crystal growth processes, these substrates offer a highly uniform crystal lattice and superior purity levels, ensuring minimal defects and excellent carrier mobility. The (111) orientation provides distinct electrical and mechanical characteristics, making it ideal for research laboratories, semiconductor manufacturing, and device development.

Each substrate meets strict industry standards for surface flatness and defect density, enabling consistent performance and reduced variation in device fabrication. Whether you require prototyping for nanotechnology or creating integrated circuits, our Silicon (Si) Crystal Substrate (111) delivers dependable quality, stability, and reproducibility to support your manufacturing and research tasks.

Silicon (Si) Crystal Substrate (111) Dia. 1 inch Applications

Silicon (Si) Crystal Substrate (111) Dia. 1 inch is valued for its precise molecular structure and excellent thermal conductivity. This substrate can accommodate diverse configurations, making it essential for industries requiring high-performance components. Its uniform surface, combined with reliable mechanical characteristics, enables device fabrication, while the (111) orientation enhances crystal growth and deposition processes across multiple applications.

1. Industrial Applications

·        High-frequency microelectronic device fabrication, where the (111) orientation supports precision layering and improves performance

·        MEMS sensor manufacturing, leveraging the substrate’s thermal and mechanical stability for reliable sensor operation

2. Research Applications

·        Advanced epitaxial growth studies, utilizing the consistent crystalline orientation to explore new semiconductor materials

·        Fundamental materials science experiments, focusing on doping profiles and crystal lattice engineering for contemporary electronics

3. Commercial Applications

·        High-resolution imaging technology, benefiting from the substrate’s uniformity and conductivity to enhance sensor efficiency

·        Consumer electronics components, providing a stable platform for integrated circuits in smartphones and other portable devices

Silicon (Si) Crystal Substrate (111) Dia. 1 inch Packaging

Each Silicon (Si) Crystal Substrate (111) Dia. 1 inch is individually cushioned within a static-free foam insert and sealed in a cleanroom-grade, moisture-barrier pouch. The package is stored under controlled temperature and humidity to minimise oxidation and particulate build-up. An outer box provides added shock protection, preventing contamination during transport. Optional customisation includes branding and barcode labelling, ensuring precise traceability for specialised applications.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (111) Dia. 1 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (111) Dia. 1 inch?

A1: Silicon (Si) Crystal Substrate (111) Dia. 1 inch typically features a crystalline orientation that promotes high electron mobility, minimal lattice defects, and excellent uniformity. With a bandgap of approximately 1.12 eV, it offers good thermal conductivity and stable mechanical strength. The substrate’s 111 orientation is especially useful for advanced epitaxial growth and device fabrication, ensuring consistent layer thickness, low wafer warp, and precise doping control.

Q2: How should this product be handled and stored?

A2: Proper handling requires wearing cleanroom gloves and using non-metal tweezers to prevent contamination. Store the substrate in a low-humidity, dust-free environment at stable room temperature, ideally in an anti-static wafer container. Avoid direct contact with skin or exposure to harsh chemicals. Inspect regularly for surface damage or particle build-up. Handle edges only to maintain the pristine crystal surface required for reliable device performance and measurement accuracy.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (111) Dia. 1 inch?

A3: These substrates typically adhere to SEMI (Semiconductor Equipment and Materials International) standards for dimensional tolerances, thickness uniformity, and defect density. They may also comply with ISO 9001 quality management for production consistency and reliability. Additional certifications can include REACH and RoHS compliance, ensuring they meet environmental and safety regulations. Manufacturers subject each substrate batch to rigorous inspection protocols to guarantee purity, orientation accuracy, and low particle contamination.

Related Information

1. Material Properties and Advantages

Tailored for semiconductor demands, the Silicon (Si) Crystal Substrate (111) Dia. 1 inch offers mechanical stability and uniformity across its entire surface. With a tightly controlled crystalline structure, it exhibits thermal conductivity and consistent lattice parameters, making it a reliable foundation for precision microelectronic applications.

Manufactured to meet high-purity standards, this substrate’s (111) orientation provides an ideal plane for epitaxial growth and device layering. By minimising dislocations and defect densities, the wafer ensures optimised electrical performance in important components such as power devices, sensors, and integrated circuits.

2. Applications in Advanced Industries

Characterised by its crystalline alignment, the Silicon (Si) Crystal Substrate (111) Dia. 1 inch finds widespread use in the development of products across fields such as quantum computing, aerospace instrumentation, and energy systems. Its precise structure and stable electronic properties enable researchers and manufacturers to engineer devices that demand material specifications.

Integrating this substrate into technologies allows for enhanced sensitivity in sensors, improved reliability in high-voltage applications, and more efficient photovoltaics. Its crystallographic qualities, combined with stringent dimensional control, deliver the precision needed for wafer-scale innovations and emerging high-performance solutions.