CY8545 Silicon (Si) Crystal Substrate (100) Dia. 2 inch

Silicon (Si) Crystal Substrate (100) Dia. 2 inch Description

The high-purity Silicon (Si) Crystal Substrate (100) with a diameter of 2 inches is characterised by its consistent crystal structure and exceptional surface quality. Its (100) orientation provides optimal uniformity, making it a reliable platform for advanced microfabrication and semiconductor device engineering. With minimal defect density and precisely controlled resistivity, this substrate caters to a wide range of applications, including integrated circuits, sensors, and photovoltaic technologies.

Each substrate undergoes strict quality control measures to ensure conformity with industry standards. The polished surface finish and accurate thickness tolerances enable repeatable, high-yield processing outcomes, while its excellent thermal and electrical properties support stable device performance. Whether used in research laboratories or high-volume production lines, our Silicon (Si) Crystal Substrate (100) delivers the consistency and reliability required for future electronic components.

Silicon (Si) Crystal Substrate (100) Dia. 2 inch Applications

Silicon (Si) Crystal Substrates with a (100) orientation and a diameter of 2 inches are recognised for their outstanding electrical characteristics, excellent thermal conductivity, and superior structural perfection. These substrates are extensively used across industries, research fields, and consumer markets. Their uniform doping profiles and minimal defects ensure high-quality outputs in a myriad of applications, from microelectronics to sensor development, making them an ideal choice for precise device fabrication and innovative technological advancements.

1. Industrial Applications

·         High-Performance Integrated Circuits: The substrate’s low defect density and consistent crystal structure enhance device reliability in advanced fabrication processes.

·         Power Electronics Modules: Superior thermal conductivity enables efficient heat dissipation, leading to improved performance in power-intensive systems.

2. Research Applications

·         Novel Semiconductor Devices: Precise doping control and excellent crystallinity support experimentation with contemporary semiconductor architectures.

·         Thin-Film Deposition Studies: Uniform substrate surface is ideal for analysing innovative coatings and new material layers.

3. Commercial Applications

·         Consumer Electronics Sensors: Low impurity levels and stable crystal structure ensure accurate sensor readings in everyday devices.

·         Photonics Components: High optical clarity and lattice uniformity allow for the development of advanced photonic circuits and integrated optics.

Silicon (Si) Crystal Substrate (100) Dia. 2 inch Packaging

Each Silicon (Si) Crystal Substrate (100) Dia. 2 inch is carefully packaged using protective foam inserts with vacuum-sealed, anti-static bags. The packaging is designed to prevent damage and contamination by minimising humidity and particulate infiltration. Store substrates in a dry, temperature-controlled environment, and handle them with gloves to maintain purity. Customised packaging solutions are available to suit unique research or production needs, ensuring secure transport and optimal substrate protection.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (100) Dia. 2 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (100) Dia. 2 inch?

A1: Silicon (Si) Crystal Substrate (100) Dia. 2 inch is known for its high crystallinity, uniform doping, and excellent thermal conductivity. Its single-crystal structure ensures minimal defects, making it ideal for semiconductor device fabrication. The (100) orientation provides predictable etching behaviour and consistent electrical properties. These wafers feature a low surface roughness, high tensile strength, and a stable coefficient of thermal expansion for reliable performance in demanding applications.

Q2: What are the recommended handling and storage practices for Silicon (Si) Crystal Substrate (100) Dia. 2 inch?

A2: Due to their high purity and precision surface finish, these substrates should be handled with cleanroom gloves and stored in a dry, dust-free environment. Avoid direct contact with bare fingers and use only dedicated tweezers or wafer handling tools. Maintain stable temperature and humidity conditions to prevent contamination and reduce stress. Store wafers in specialised carriers to minimise mechanical damage.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (100) Dia. 2 inch?

A3: High-quality Silicon (Si) Crystal Substrate (100) Dia. 2 inch wafers typically comply with SEMI standards for thickness tolerance, flatness, and surface finish. Many suppliers also hold ISO 9001 certifications to ensure consistent manufacturing processes and traceability. Additional certifications can include RoHS and REACH compliance for restricted substances. Laboratory testing verifies resistivity, crystallographic orientation, and defect density in alignment with semiconductor industry norms.

Related Information

1. Material Properties and Advantages

Silicon (Si) Crystal Substrate (100) Dia. 2 inch exhibits exceptional thermal stability, making it an ideal choice for high-temperature applications in semiconductor processing. Such stability helps preserve wafer integrity during device fabrication steps that can involve extreme conditions. The well-defined (100) crystalline orientation provides uniform electrical characteristics and allows for consistent etching profiles, which are crucial in micro- and nano-scale device manufacturing.

The substrate’s strong mechanical strength ensures reliable handling and reduces the risk of damage during transport or processing operations. Thanks to its excellent carrier mobility and low defect density, this silicon substrate supports faster electron movement and higher device performance in applications such as power electronics, sensors, and integrated circuits. Furthermore, its smooth surface finish facilitates precise photolithography and improves thin-film adhesion in complex device structures.

2. Quality Control Measures

Focused metrology protocols are employed throughout the production cycle to maintain strict tolerance levels for thickness, diameter, and flatness. Advanced inspection methods, such as automated surface scanning and defect mapping, help detect any micro-scratches or crystalline imperfections that could compromise device yields. These rigorous inspection processes ensure a high-quality substrate capable of supporting intricate device architectures.

High-resolution equipment is used to measure resistivity and verify doping concentration, which are critical in achieving the desired electrical properties for end-use applications. This layer of assurance safeguards product reliability and consistency across different manufacturing runs. Moreover, integrated traceability systems record every stage of wafer creation, enabling manufacturers to swiftly address any deviations and maintain a consistently reliable supply of Silicon (Si) Crystal Substrate (100) Dia. 2 inch wafers.