CY8553 Silicon (Si) Crystal Substrate (111) Dia. 4 inch

Silicon (Si) Crystal Substrate (111) Dia. 4 inch Description

Our 4-inch (111) Silicon (Si) Crystal Substrate is notable for its exceptional crystallographic uniformity and high-purity composition, making it a prime choice for advanced research and industrial applications. The (111) orientation offers unique structural properties that enable precise control over epitaxial growth and doping processes, essential for semiconductor device fabrication. This substrate is polished to a mirror-like finish, ensuring minimal surface defects and superior film adhesion.

Manufactured under rigorous quality standards, each wafer undergoes thorough inspection and testing to guarantee consistent thickness, flatness, and resistivity. The result is a dependable platform for producing high-performance electronics, sensors, and photonics devices. With its excellent thermal and electrical characteristics, this Si (111) substrate is engineered to deliver reliable results in a range of critical research and commercial endeavours.

Silicon (Si) Crystal Substrate (111) Dia. 4 inch Applications

Silicon (Si) Crystal Substrate (111) Dia. 4 inch is widely recognised for its stability, uniform doping capabilities, and excellent mechanical properties, making it indispensable across various industries. Its distinct crystallographic orientation provides superior electronic properties, reduced defects, and efficient thermal management. From precision electronics to advanced renewable energy solutions, this high-quality substrate finds its place in numerous civilian applications where reliability, performance, and scalability are paramount.

1. Electronics and Semiconductor Applications

·        Advanced Transistor Fabrication: The (111) orientation ensures excellent defect control and doping uniformity for improved device performance.

·        High-Speed Integrated Circuits: Its superior crystalline structure supports rapid signal processing in consumer and industrial electronics.

2. Medical and Healthcare Devices

·        Sensor Arrays: The uniform crystal lattice enables precise detection and measurement in patient monitoring systems.

·        Implantable Electronics: Excellent biocompatibility and thermal conductivity lead to reliable and safe long-term performance.

3. Renewable Energy Solutions

·        Photovoltaic Cells: The stable substrate structure promotes efficient conversion of solar energy into electricity.

·        Concentrated Solar Power Components: High thermal conductivity aids in managing heat flux for enhanced system reliability.

Silicon (Si) Crystal Substrate (111) Dia. 4 inch Packaging

Each 4-inch Silicon (Si) Crystal Substrate (111) is individually sealed in an anti-static pouch with soft foam cushioning to protect against mechanical shock and contamination. Our recommended storage conditions include a clean, temperature-controlled environment with low humidity. To prevent contamination, vacuum-sealed packaging and sealed edge protection are employed. Custom packaging and labelling options are available upon request, ensuring safe transportation and easy identification for various research and industrial applications.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon (Si) Crystal Substrate (111) Dia. 4 inch FAQs

Q1: What are the key material properties of Silicon (Si) Crystal Substrate (111) Dia. 4 inch?

A1: The 4-inch diameter, single-crystal silicon substrate with a (111) orientation typically offers a lattice constant of approximately 5.43 Å and a thickness around 525 µm. It features high purity levels (99.9999% or higher) and exceptional crystallographic uniformity. Resistivity can range from a few milli-ohm·cm up to several hundred ohm·cm, depending on doping. This orientation is favoured for advanced device applications due to its unique atomic arrangement.

Q2: What are the recommended handling procedures and storage conditions for 4-inch (111)-oriented Silicon substrates?

A2: These substrates should be handled in a cleanroom environment with powder-free gloves to prevent particulate or ionic contamination. Use fixed-edge wafer tweezers or vacuum wands to avoid contact damage. Store them in wafer carriers or cassettes to minimise mechanical stress and surface scratches. Maintain low humidity and stable temperatures, typically around 21°C, to ensure minimal oxidation and particle accumulation.

Q3: Which quality standards and certifications apply to Silicon (Si) Crystal Substrate (111) Dia. 4 inch?

A3: Manufacturers often adhere to SEMI M1 specifications for wafer geometry, thickness, and surface quality, along with ISO 9001 quality management system certifications. Some suppliers also comply with RoHS and REACH directives to ensure environmental compliance. Additional documentation may include a certificate of analysis verifying crystallographic orientation, doping concentration, resistivity, and defect density. These standards help guarantee uniformity, traceability, and consistent device performance.

Related Information

1. Industry Standards and Certifications

A wide array of international benchmarks ensures that Silicon (Si) Crystal Substrate (111) Dia. 4 inch wafers satisfy stringent material quality requirements. Adhering to SEMI specifications, these substrates typically undergo meticulous testing for crystallographic orientation, thickness tolerance, and surface flatness, confirming their compliance with leading global standards.

B certification bodies, such as ISO and other industry-recognised institutions, provide third-party validation of manufacturing practices and quality control approaches. For 4-inch (111)-oriented silicon wafers, these credentials assure customers that each substrate is produced in a controlled environment and meets specific performance criteria for advanced applications.

2. Quality Control Measures

C comprehensive quality inspections are conducted at multiple stages of wafer production, from crystal growth through final polishing. Non-destructive evaluation techniques, including X-ray diffraction and optical profilometry, verify that each substrate conforms to required thickness uniformity and surface finish benchmarks.

D precision instruments monitor the flatness of the 4-inch (111) silicon substrates to minimise wafer bow or warp. This attention to detail helps maintain tight electrical characteristics and reduces the likelihood of defects, granting end users the consistent, high-performance materials they need for critical semiconductor processes.