CY8563 Silicon Carbide Wafer SiC Substrate 2 in 6H P-type

Silicon Carbide Wafer SiC Substrate 2 in 6H P-type Description

Our 2-inch 6H P-type Silicon Carbide (SiC) wafer is designed for performance in high-power, high-temperature, and high-frequency applications. With a wide bandgap, good thermal conductivity, and chemical stability, this substrate demonstrates efficiency and reliability. Its P-type doping provides enhanced carrier mobility and low defect density, ensuring conditions for power electronic devices and semiconductor research.

This wafer meets strict industry quality standards, undergoing inspections to guarantee uniform thickness, precise crystallographic orientation, and minimum surface roughness. Consequently, it provides designers and researchers with a platform for high-performance components such as power inverters, radio frequency amplifiers, and sensors. Utilise this 6H P-type SiC wafer to achieve durability and efficiency in demanding operating conditions.

Silicon Carbide Wafer SiC Substrate 2 in 6H P-type Applications

Silicon Carbide (SiC) wafers in the 6H P-type configuration exhibit thermal conductivity, broad bandgap energy, and mechanical stability. These properties render them suitable for sectors demanding high-temperature endurance and efficient power handling. From electronics to medical devices, the performance and scalability of SiC substrates provide opportunities for technology development, enhancing component longevity and operational efficiency across various applications.

1. Electronics and Semiconductor Applications

·        High-Power Electronics: Suitable for manufacturing power MOSFETs and diodes that operate in elevated temperatures and high-voltage conditions.

·        High-Frequency Devices: Facilitates signal transmission and reduces energy loss for semiconductor applications in wireless communication and radar systems.

2. Medical and Healthcare Equipment

·        Diagnostic Imaging Devices: Ensures stable operation under high-load conditions for precise image capture in MRI and other imaging technologies.

·        Sensor Components: Provides responsiveness and durability under thermal stress, supporting accurate patient monitoring and laboratory equipment.

3. Research and Scientific Instruments

·        Advanced Laboratory Equipment: Ensures performance under extreme conditions for experiments involving temperature-sensitive materials.

·        High-Temperature Testing Systems: Supports operation in research settings requiring stable substrates at elevated temperatures.

Silicon Carbide Wafer SiC Substrate 2 in 6H P-type Packaging

For shipping, the wafer is placed in anti-static, vacuum-sealed packaging with foam or polystyrene inserts to protect from mechanical damage. We recommend storing it in a clean, temperature-controlled environment with low humidity to ensure minimal dust exposure. Containers prevent cross-contamination, while nitrogen purging or stable inert environments can increase longevity. Packaging options, including sealed crates and protective sleeves, are available upon request.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 2 in 6H P-type FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 2 in 6H P-type?

A1: Key characteristics of a 2-inch 6H P-type SiC wafer include its hexagonal crystal structure, wide bandgap of about 3.0 eV, and thermal conductivity exceeding 3 W/cm·K. The wafer’s doping is typically achieved using aluminium or boron, yielding stable p-type conductivity. Its hardness, chemical inertness, and breakdown field make it suitable for high-power and high-temperature applications.

Q2: How should this Silicon Carbide Wafer SiC Substrate 2 in 6H P-type be handled and stored?

A2: Avoid contact with the wafer’s active surface by using non-abrasive gloves or tweezers during handling. Store the wafers in a clean, dry environment at stable room temperature, ideally within a dedicated wafer carrier. Minimising airborne particulates, preventing electrostatic discharge, and utilising protective packaging are crucial to preserve the wafer’s surface quality and performance.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 2 in 6H P-type?

A3: These 6H P-type SiC wafers typically comply with ISO 9001 for quality management and may also meet specific semiconductor industry standards like SEMI M55 for wafer geometry. Manufacturers often follow incoming material inspection protocols, including surface flatness, thickness uniformity, resistivity, and defect density checks. Compliance with REACH and RoHS directives may also be relevant for environmental safety.

Related Information

1. Material Properties and Advantages

Recognised for its thermal conductivity and mechanical robustness, the Silicon Carbide Wafer SiC Substrate 2 in 6H P-type exhibits performance in high-temperature and high-voltage applications. Its 6H crystal structure allows for tightly arranged carbon and silicon atoms, resulting in enhanced hardness and a reduced risk of lattice defects. This crystalline layout also minimises the likelihood of micro-cracking, ensuring the integrity of the wafer under stress. Reinforced by p-type doping, this substrate provides conduction mechanisms necessary for power electronics and optoelectronic devices.

Organised grain boundaries across the wafer promote electronic mobility and improved charge carrier transport. The high breakdown voltage of 6H SiC reduces thermal and electrical losses, enabling efficient power conversion in advanced systems. Additionally, this substrate’s resistance to corrosion and oxidation contributes to extended device lifespan. Such properties deliver advantages when designing and manufacturing products requiring thermal dissipation and electrical performance.

2. Comparative Analysis with Alternative Materials

Many semiconductor materials struggle under extreme conditions, but the 2 in 6H P-type Silicon Carbide Wafer performs where others fail. For example, silicon-based wafers may lose conductivity integrity at higher voltages and temperatures, whereas SiC maintains operation in demanding systems. Gallium nitride (GaN) substrates may offer certain high-frequency benefits, yet they do not provide the robustness and wide bandgap profile necessary for high power densities in various electronics.

Combining the properties of 6H polytype configuration and p-type doping provides an edge in industries that depend on power handling. The wafer’s reduced lattice mismatches contribute to fewer device defects compared to alternatives, making it a choice for performance transistors, diodes, and sensors. Engineers favour Silicon Carbide not only for its thermal management but also for reducing overall energy consumption in power-intensive applications.