CY8567 Silicon Carbide Wafer SiC Substrate 3 in 6H P-type

Silicon Carbide Wafer SiC Substrate 3 in 6H P-type Description

Experience the exceptional performance of our 3-inch 6H P-type Silicon Carbide wafer, engineered to deliver superior material properties for advanced electronic and high-temperature applications. Its wide bandgap, excellent thermal conductivity, and notable chemical stability ensure consistent performance under demanding conditions. The 6H polytype guarantees uniform crystal structure and enhanced carrier mobility, while the P-type doping provides reliable conduction characteristics essential for power devices and high-frequency components.

Manufactured under stringent quality standards, each wafer undergoes rigorous testing to meet narrow thickness tolerances and maintain minimal defect levels. This attention to quality provides consistent surface morphology and dependable device yields. Ideal for applications in power electronics, harsh-environment sensors, and advanced research, our 6H P-type SiC substrate sets the benchmark for high-performance semiconductor solutions.

Silicon Carbide Wafer SiC Substrate 3 in 6H P-type Applications

Silicon Carbide Wafer (SiC Substrate) 3 in 6H P-type presents robust physical and electronic characteristics suitable for various industries. Its wide bandgap, high thermal conductivity, and strong mechanical properties allow for efficient, reliable, and long-lasting device fabrication. By maximising power conversion and heat dissipation capabilities, this substrate assists in advancing next-generation high-performance systems, driving innovation in electronics, healthcare devices, and scientific research applications.

1. Electronics and Semiconductor Industry

·         Application 1: Ideal for power transistors in high-voltage, high-frequency circuits, leveraging wide bandgap and heat resistance

·         Application 2: Enhances reliability of high-power converters for energy-efficient data centres and commercial electronics

2. Medical and Healthcare Applications

·         Application 1: Offers stable, high-precision sensor modules for advanced imaging equipment

·         Application 2: Facilitates development of compact, heat-tolerant medical devices for patient monitoring and diagnostics

3. Research and Scientific Tools

·         Application 1: Serves as a durable base material in lab-on-a-chip platforms for chemical analysis

·         Application 2: Enables improved performance in spectroscopy equipment, thanks to excellent thermal and electrical properties

Silicon Carbide Wafer SiC Substrate 3 in 6H P-type Packaging

Our 3-inch 6H P-type Silicon Carbide (SiC) wafers are individually placed in electrostatic-discharge-safe containers, surrounded by foam inserts. Each wafer is vacuum-sealed for enhanced moisture protection, minimising damage and contamination risks. Store in a cool, dry area with stable humidity levels and minimal UV exposure. We recommend using an ISO-class cleanroom environment for handling to avoid contamination. Customised packaging, such as nitrogen purging or double-layer shielding, is available upon request.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 3 in 6H P-type FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 3 in 6H P-type?

A1: The 3-inch 6H P-type silicon carbide wafer offers a wide bandgap (~3 eV), excellent thermal conductivity (~4.9 W/cm·K), and high breakdown electric field strength (~3 MV/cm). Its P-type doping typically uses aluminium or boron, providing stable hole conductivity. The hexagonal 6H crystal structure ensures superior electron mobility along certain axes. This material also withstands high temperatures, enabling high-power and high-frequency device applications with minimal leakage currents under extreme conditions.

Q2: How should this product be handled and stored to preserve its integrity?

A2: Handle the wafer by its edges using non-abrasive gloves to avoid introducing scratches or contaminants. Store it in a clean, dry environment with minimal exposure to light and moisture. Use antistatic carriers and maintain stable temperature and humidity conditions. Implement thorough cleaning protocols if surface residues accumulate, ensuring only approved solvent solutions are used. Proper labeling and secure packaging prevent inadvertent mix-ups or surface damage.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 3 in 6H P-type?

A3: Reputable manufacturers comply with ISO 9001 for general quality management and ISO 14001 for environmental responsibility. Additionally, wafers intended for semiconductor applications often adhere to SEMI standards (e.g., SEMI M55) governing substrate thickness, orientation, and flatness. Some suppliers also carry RoHS and REACH certifications to ensure compliance with hazardous substance regulations. Regular audits and documentation guarantee traceability, ensuring that each wafer meets strict performance and safety requirements.

Related Information

1. Material Properties and Advantages

This Silicon Carbide Wafer SiC Substrate in a 3-inch diameter and 6H crystal structure offers excellent thermal conductivity, making it ideal for applications that demand efficient heat dissipation. The P-type doping ensures reliable electrical conductivity, enabling stable performance in high-power circuits such as those used in power converters and high-voltage switching devices. The wafer’s durable lattice structure grants it exceptional fracture toughness, contributing to extended device lifetimes even under demanding working conditions.

Characterised by a wide bandgap, the 6H P-type wafer exhibits lower leakage currents at elevated temperatures compared to conventional semiconductor materials. Its high breakdown field strength further enhances device reliability, minimising energy losses and improving overall system efficiency. Additionally, the wafer’s capacity to withstand harsh operational environments, including extreme temperatures and chemical exposure, offers a clear advantage for manufacturers striving to develop durable, next-generation components.

2. Applications in Advanced Industries

Advanced power electronics systems benefit significantly from the 6H P-type Silicon Carbide substrate due to its ability to handle elevated voltages and currents. In electric vehicles, these wafers are employed in power control modules that require fast switching speeds and minimal energy dissipation, thereby improving vehicle efficiency and extending battery range. Aerospace applications also leverage the wafer’s heat-resistant properties to manage thermal loads in avionics systems, enhancing overall reliability and performance.

Medical technology sectors capitalise on Silicon Carbide Wafer SiC Substrate 3 in 6H P-type for its durability and stable operation in high-temperature environments. Imaging and diagnostic equipment often operate under continuous loads, making durable, high-performance substrates essential for uninterrupted functionality. By incorporating these wafers, medical device manufacturers ensure precise data acquisition and dependable system operability, supporting the ongoing drive for innovation in healthcare.