CY8575 Silicon Carbide Wafer SiC Substrate 6 in 6H P-type

Silicon Carbide Wafer SiC Substrate 6 in 6H P-type Description

Experience enhanced performance with our 6-inch 6H P-type Silicon Carbide (SiC) Wafer, engineered for power electronics and high-temperature applications. Leveraging the inherently wide bandgap of SiC, this substrate delivers superior thermal conductivity, mechanical strength, and chemical stability, ensuring minimal degradation under extreme operating conditions. Combined with precise P-type doping, the wafer is ideal for advanced device fabrication, including power MOSFETs, IGBTs, and RF switches that demand reliability and efficiency at elevated voltages and frequencies.

Every wafer undergoes stringent quality control measures, ensuring uniform thickness, low defect density, and consistent electrical properties. Compliant with industry standards, our SiC substrates are engineered to support applications in green energy, automotive, and industrial sectors. Invest in these high-quality substrates to elevate device performance, reduce power losses, and extend product lifecycles.

Silicon Carbide Wafer SiC Substrate 6 in 6H P-type Applications

This advanced 6-inch 6H P-type Silicon Carbide wafer provides excellent thermal management, high breakdown voltage, and superior hardness, making it an ideal platform for demanding electronic applications. Its wide bandgap supports higher power operations with reduced energy loss, while its robust chemical stability ensures reliability in harsh environments. These unique features expand possibilities in various industries, offering performance and long-term durability.

1. Electronics and Semiconductor Industry

·         High-Temperature Power Devices: Leverage the wafer’s superior thermal conductivity to develop efficient power modules for industrial equipment and consumer electronics.

·         Wide Bandgap Transistors: Reduce energy losses and enable faster switching speeds, ensuring improved device performance and longevity.

2. Healthcare and Medical Devices

·         Diagnostic Equipment: Utilize the wafer’s chemical stability and reliable electrical properties for sensors used in advanced diagnostic systems.

·         Wearable Health Monitors: Provide robust substrates that can withstand harsh operating conditions in continuously operating medical devices.

3. Automotive and Renewable Energy

·         Electric Vehicle Inverters: Deliver more efficient, high-voltage inverters with less heat buildup and enhanced overall performance.

·         Solar Power Converters: Optimize conversion efficiency in solar inverters and reduce energy dissipation, contributing to cleaner and more sustainable energy solutions.

Silicon Carbide Wafer SiC Substrate 6 in 6H P-type Packaging

Each 6-inch 6H P-type Silicon Carbide wafer is shipped in an ESD-safe container with foam inserts to prevent mechanical damage. Individual envelopes or vacuum-sealed bags provide an additional barrier against moisture and contaminants. The wafers should be stored in a clean, low-humidity environment, away from direct sunlight. Anti-contamination measures include a particle-free handling area. Customisable labeling and packaging options are available upon request.

Packaging: Vacuum sealed, Wooden Box, or Customised.

Silicon Carbide Wafer SiC Substrate 6 in 6H P-type FAQs

Q1: What are the key material properties of Silicon Carbide Wafer SiC Substrate 6 in 6H P-type?

A1: The 6H polytype of p-type SiC features a wide bandgap enabling high-temperature and high-power performance, exceptional thermal conductivity up to 4.9 W/cm·K, and excellent mechanical hardness (Mohs rating around 9). It allows stable doping concentrations, supporting reliable electronic properties. Its crystalline structure offers low defect densities and minimal impurity levels, facilitating superior device efficiency for advanced power, RF, or sensor applications.

Q2: How should this product be handled and stored?

A2: Operators should handle p-type 6H SiC wafers with cleanroom gloves and avoid touching active surfaces to prevent contamination. Maintain an electrostatic discharge-controlled environment, as static can damage sensitive doping profiles. Store wafers in sealed, moisture-proof carriers at stable temperatures of 20-25°C. Regular cleaning with approved, non-abrasive solutions helps sustain surface integrity and reduces the risk of particle-induced defects.

Q3: Which quality standards and certifications apply to Silicon Carbide Wafer SiC Substrate 6 in 6H P-type?

A3: Silicon Carbide wafers typically comply with ISO 9001-certified manufacturing processes, ensuring consistent quality and rigorous documentation. They also meet SEMI M55 standards for dimensions, crystal orientation, and thickness tolerances. Additionally, doping uniformity and surface flatness are monitored under advanced metrology protocols to satisfy industry requirements. Some producers may hold RoHS or REACH certifications to guarantee restricted substance controls.

Related Information

1. Manufacturing Process

Engineered through a specialised crystal growth procedure known as physical vapour transport (PVT), the Silicon Carbide Wafer SiC Substrate 6 in 6H P-type undergoes a meticulous formation of uniform 6H polytype layers. This technique controls temperature gradients, vacuum levels, and source placement to promote a highly repeatable process. The result is an extraordinary level of crystalline purity, making the substrate exceptionally stable under demanding temperature and stress conditions. By precisely regulating the doping concentration during crystal growth, manufacturers achieve the P-type conductivity that is vital for power electronic applications.

Characterised by rigorous wafer slicing and surface finishing, the production phase ensures that each 6-inch disc retains a consistent thickness while preserving crystallographic integrity. Careful lapping, polishing, and cleaning steps remove surface contaminants and blemishes, reducing the likelihood of defects that could interfere with device performance. This multi-stage manufacturing approach allows for the creation of a finished substrate that boasts ultra-low defect densities, essential for the development of diodes, transistors, and other high-performance electronic components.

2. Quality Control Measures

Thorough in-line inspections verify that each wafer meets stringent standards for flatness, cleanliness, and doping uniformity. Automated scanning systems check the wafer surface for particulate matter, micro-scratches, and dislocations, ensuring that even the smallest discrepancies are promptly detected. These controls reduce device failure rates and guarantee the high reliability demanded by power modules and other critical applications that depend on stable P-type 6H silicon carbide substrates.

Sophisticated measurement tools such as laser interferometers and photoluminescence testers are employed to scrutinise crystal structure homogeneity and thickness variance. Electrical testing gauges the wafer’s resistivity profile, confirming that the P-type doping is consistently maintained throughout each substrate. Close adherence to these quality control protocols ensures that every Silicon Carbide Wafer SiC Substrate 6 in 6H P-type can fulfil the rigorous demands of power management systems, high-temperature environments, and emerging fields such as electric vehicle technologies.