CY8921 CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm

CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm Description

This premium CVD Monolayer Tungsten Diselenide (WSe₂) film is grown on a 10×10 mm c-plane sapphire substrate, providing a highly uniform and atomically thin semiconductor layer. The precise chemical vapour deposition process ensures excellent crystallinity, low defect density, and minimal grain boundaries, making it suitable for research and development in advanced electronics. Its direct bandgap and strong photoluminescence offer enhanced performance in optoelectronic devices, while the inherently high carrier mobility and flexibility expand its use cases in emerging 2D applications.

Manufactured under rigorous quality assurance protocols, each WSe₂ film undergoes thorough characterisation to confirm thickness uniformity, structural integrity, and monolayer purity. This stringent approach establishes consistent and repeatable results, making our CVD Monolayer Tungsten Diselenide on sapphire substrate an exceptional choice for research in photovoltaics, sensing devices, and nanoelectronic innovations.

CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm Applications

Engineered using state-of-the-art CVD techniques, monolayer tungsten diselenide (WSe2) on a C-plane sapphire substrate offers exceptional electronic and optical performance in a convenient 10x10 mm format. This ultrapure 2D material provides superior carrier mobility, strong spin-orbit coupling, and robust flexibility, making it suitable for advanced device fabrication. Its high-quality crystalline structure supports reliable performance in various environments, driving innovation across electronics, research, and consumer-oriented products.

1. Electronics and Semiconductor Applications

·         Integration into ultra-thin transistors to reduce device footprint and enhance switching speeds

·         Use in high-sensitivity photodetectors due to its strong light absorption and efficient charge transport

2. Research and Scientific Instruments

·         Study of novel quantum phenomena arising from monolayer WSe2’s distinct band structure

·         Exploration of new optoelectronic properties for academic and industrial R&D initiatives

3. Consumer and Industrial Innovations

·         Potential incorporation into flexible displays or wearable electronics for improved durability and performance

·         Sensor development for chemical and environmental monitoring, leveraging its excellent surface sensitivity

CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm Packaging

This product is carefully packaged in a dedicated protective box with anti-static foam padding to guard against shock and vibration. A sturdy plastic enclosure containing a desiccant packet helps maintain dryness, while a sealed plastic bag prevents dust contamination. Store in a cool, dry environment away from direct sunlight. Customised labeling and specialised protective layers are available upon request to meet unique handling requirements.

Packaging: Vacuum sealed, Wooden Box, or Customised.

CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm FAQs

Q1: What are the key material properties of CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm?

A1: This monolayer WSe2 film features an atomically thin structure, providing a direct bandgap near 1.6 eV for efficient optoelectronic performance. It exhibits strong photoluminescence with high exciton binding energies, making it suitable for photonic and electronic devices. The c-plane sapphire substrate ensures excellent lattice matching, enhancing crystallinity and reducing defects. Typical properties include uniform thickness, high carrier mobility, and stable thermomechanical behaviour for reliable device integration.

Q2: How should this product be handled and stored?

A2: Handle the monolayer WSe2 film using cleanroom protocols to avoid particulate contamination. Wear gloves to prevent direct contact with the surface and use non-abrasive tweezers or vacuum wands to minimise mechanical stress. Store the substrate in a low-humidity environment, ideally under inert gas or vacuum, to protect against oxidation. Maintain moderate temperatures and avoid exposure to excessive light or chemical vapours that could degrade the material.

Q3: Which quality standards and certifications apply to CVD Monolayer Tungsten Diselenide on C-plane Sapphire Substrate WSe2 Film 10x10 mm?

A3: These WSe2 films typically adhere to standardised industry protocols for thin-film deposition, such as ISO 9001 for quality management systems. Consistent monolayer thickness, minimal contamination, and robust crystallinity are verified via optical characterisation, Raman spectroscopy, and atomic force microscopy. Additionally, product traceability and documentation of the deposition parameters support reliable manufacturing practices, ensuring repeatable results and conformance to commercial and research-grade quality expectations.

Related Information

1. Manufacturing Process

CVD monolayer tungsten diselenide on a c-plane sapphire substrate is fabricated through a meticulously controlled thermal deposition method. This process involves introducing precise ratios of tungsten and selenium precursors into a reaction chamber under optimised temperature and pressure conditions. The c-plane sapphire substrate is selected for its stable crystal lattice, which aids in achieving a uniform monolayer of WSe2 across the 10x10 mm surface area. Sophisticated instrumentation ensures consistent growth rates, enabling high-quality layer formation while minimising defects.

Under carefully regulated environments, the substrate is pre-treated to remove contaminants and ensure optimal adhesion of the WSe2 film. A crucial aspect of the procedure is maintaining uniform temperatures throughout the chamber, allowing for the reliable nucleation and lateral expansion of the tungsten diselenide monolayer. By fine-tuning variables such as precursor flow, carrier gas composition, and ramp-up times, manufacturers can achieve a high-purity, atomically thin layer that delivers exceptional optical and electronic properties essential for advanced device applications.

2. Applications in Advanced Industries

Advanced photonic and optoelectronic sectors benefit significantly from the precise characteristics of this monolayer WSe2 film. Its direct bandgap structure in the visible to near-infrared range enables efficient light absorption and emission, making it suitable for photodetectors, light-emitting diodes, and other innovative optical components. Furthermore, its exceptional carrier mobility fosters improved performance and lower power consumption in modern electronic devices, driving increased interest from manufacturers seeking to push technological boundaries.

Rising demand for miniaturised and flexible electronic systems has strengthened the film’s role in sectors requiring compact, high-performance solutions. In fields such as flexible displays, sensors, and next-generation transistors, the 10x10 mm WSe2 monolayer on sapphire can be integrated into key components that demand both reliability and versatility. By marrying ultra-thin geometry with remarkable electrical properties, this CVD-grown tungsten diselenide layer paves the way for products that can thrive in evolving technological landscapes.