CY8928 CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm

CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm Description

This high-quality CVD tin disulfide (SnS₂) film is meticulously grown on a c-plane sapphire substrate measuring 10×10 mm. SnS₂, a layered semiconductor with a wide bandgap, offers excellent optical transparency and electrical tunability, making it suitable for advanced device architectures. The sapphire substrate further enhances the film’s crystal growth, ensuring uniformity and consistency in thickness. Its stable structure is suitable for various electronic and optoelectronic applications, including photodetectors, field-effect transistors, and energy-harvesting devices.

Each SnS₂ film undergoes rigorous quality control to verify its compositional purity, morphological consistency, and surface smoothness. This level of precision and repeatability supports reliable device fabrication and higher performance in end-user applications. By combining precise deposition techniques with stringent quality standards, this SnS₂ film provides a dependable platform for research and product development.

CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm Applications

Tin Disulfide (SnS2) films grown on c-plane sapphire substrates provide a stable, high-performance platform with excellent optical and electrical characteristics. Their uniform crystalline structure and chemical stability make them suitable for various civilian and industrial applications. Whether for advanced semiconductor devices or energy solutions, these films enhance the efficiency and reliability of technologies.

1. Industrial Applications

·         Advanced sensor manufacturing: The film’s conductivity and chemical stability enable monitoring in quality control instruments.

·         Chemical processing systems: SnS2 coatings enhance corrosion resistance, improving durability and performance in process environments.

2. Research Applications

·         Semiconductor device prototyping: Researchers can explore device architectures leveraging the material’s electronic properties.

·         Analytical instrumentation: The film’s crystallinity provides data in spectroscopic and microscopic studies.

3. Commercial Applications

·         Solar components: The optical absorption of SnS2 supports photovoltaic cells in renewable energy solutions.

·         Telecommunications equipment: Its electronic and thermal characteristics help to optimise high-frequency transceivers for faster communication.

CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm Packaging

CVD Tin Disulfide Film on C-plane Sapphire Substrate (SnS2) 10×10 mm is carefully packaged in a sealed, static-free container lined with foam to protect against shocks. Moisture-absorbing desiccant packs prevent humidity damage, and each piece is isolated to avert cross-contamination. Store the film in a clean, airtight environment at room temperature. Custom packaging and specialised labelling options are available upon request.

Packaging: Vacuum sealed, Wooden Box, or Customised.

CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm FAQs

Q1: What are the key material properties of CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm?

A1: Tin disulfide (SnS2) thin film deposited via CVD on a c-plane sapphire substrate typically features a direct band gap of approximately 2.2 to 2.4 eV, uniform crystalline orientation, and chemical stability. The sapphire base provides thermal conductivity and low lattice mismatch, allowing consistent epitaxial film growth. These characteristics make SnS2 films suitable for optoelectronic devices, sensors, and commercial applications requiring transparency and controlled electrical properties.

Q2: How should this product be handled and stored?

A2: When handling, wear clean gloves to avoid surface contamination. The film can be sensitive to mechanical stress and excessive force, so use minimal pressure and avoid abrupt impacts. Store the substrate in a clean, dry environment with humidity below 50%. Keep it in an anti-static container, shielded from dust and corrosive chemicals. Avoid sudden temperature changes, and use non-abrasive tools to prevent scratches or damage.

Q3: Which quality standards and certifications apply to CVD Tin Disulfide Film on C-plane Sapphire Substrate SnS2 Film 10x10 mm?

A3: These films typically align with recognised industry quality management systems, such as ISO 9001, to ensure consistent production and traceability. They may also meet RoHS and REACH compliance to assure environmental and health safety. Additional quality protocols, including optical and structural inspection, guarantee uniformity, adhesion, and thickness accuracy. Each batch undergoes rigorous characterisation, ensuring reliability for commercial and industrial applications.

Related Information

1. Material Properties and Advantages

Unlike many other layered semiconductor coatings, the CVD Tin Disulfide (SnS₂) film on a C-plane sapphire substrate exhibits a uniform and defect-minimised crystal structure. This 10x10 mm film balances chemical stability with optical characteristics, making it suitable for device applications that demand consistent performance over periods. Its low surface roughness, combined with controlled film thickness, promotes adherence for functional layers or protective coatings.

The properties of this SnS₂ film result from the optimised CVD process, which maintains temperature and pressure conditions during deposition. This leads to a bonded interface between the SnS₂ layer and the sapphire substrate, ensuring mechanical robustness and reducing the likelihood of delamination. Furthermore, its crystalline orientation on the C-plane enhances electrical conduction pathways, making it suitable for electronics and sensors.

2. Applications in Advanced Industries

Across numerous technology sectors, the electrical and optical traits of this 10x10 mm CVD SnS₂ film enable engineering solutions. Its semiconductor profile, paired with a wide bandgap, suits emerging optoelectronic devices requiring stable performance under varied conditions. Researchers explore its potential for photodetectors, photovoltaic elements, and integrated circuitry where low defect density is essential.

Combining inertness with carrier mobility, this film meets the needs of sensor manufacturing. Sectors invested in electronics and monitoring systems benefit from the film’s construction and potential for low-power operation. Its attachment to sapphire ensures a reliable platform for device assembly, facilitating products that integrate SnS₂ technology.