CY9483 P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm

P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Description

The P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm is manufactured from high-purity silicon and doped with boron to achieve p-type conductivity. Its (100) crystallographic orientation supports uniform epitaxial growth during semiconductor processing. With a resistivity range of 10-20 ohm·cm, the substrate meets the electrical and structural demands of advanced device fabrication while maintaining low defect density and stable surface conditions.

P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Applications

Electronics and Semiconductor Manufacturing
- Used as a substrate in integrated circuit fabrication to achieve consistent epitaxial layer growth by leveraging its precise (100) orientation.
- Applied as the base material for power semiconductor devices to control conductivity through calibrated boron doping.

Industrial and Research Applications
- Utilised in experimental studies for dopant diffusion analysis in silicon, ensuring quantifiable results through uniform resistivity.
- Employed in process development laboratories to test advanced surface treatments that require a stable, low-defect substrate.

P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Packing

The wafers are individually secured in anti-static carriers and placed within rigid, foam-lined containers to minimise physical impact and contamination. An additional protective film shields the surface from airborne particulates. Storage in a temperature-controlled, low-humidity environment is recommended. Custom packaging options, including vacuum-sealing and detailed labelling, are available to accommodate specific handling protocols.

Frequently Asked Questions

Q1: What measures are applied to control dopant consistency in these wafers?
A1: SAM utilises advanced boron diffusion techniques combined with surface metrology, such as electrical resistance scanning, to maintain uniform dopant distribution which is critical for sustaining the designated 10-20 ohm·cm resistivity.

Q2: How is the (100) crystallographic orientation verified?
A2: The orientation is confirmed using X-ray diffraction (XRD) and electron backscatter diffraction (EBSD) analyses. These methods ensure the substrate complies with the stringent standards needed for subsequent epitaxial processes.

Q3: What storage conditions are recommended to preserve wafer integrity?
A3: Wafers should be stored in a temperature-regulated, low-humidity environment within anti-static packaging to prevent contamination and mechanical stress, thereby maintaining the substrate’s structural and electrical properties.

Additional Information

Silicon wafer substrates are fundamental in the semiconductor industry, providing the base for integrated circuit and microelectronic device fabrication. The controlled crystallographic orientation and doping allow for reliable process integration in oxidation, lithography, and etching operations. Continuous development in material processing techniques supports enhanced device performance and yield in industrial settings.

Advances in dopant control and surface characterisation have improved the consistency and performance of silicon wafers. Techniques such as XRD and SEM offer in-depth insights into structural and morphological characteristics, enabling engineers to fine-tune process parameters for optimised device performance in both research laboratories and production environments.