CY9485 200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-100 ohm·cm

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-100 ohm·cm Description

This substrate is fabricated from high-purity silicon, doped with boron to achieve P-type conductivity and a resistivity range between 1-100 ohm·cm. The (100) crystal orientation aids compatibility with standard semiconductor processing equipment. The 200 mm diameter dimension ensures integration into current production lines, while stringent doping verification techniques produce uniform electrical characteristics essential for device performance.

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-100 ohm·cm Applications

1.       Electronics Manufacturing
   - Used as a base substrate in integrated circuits to achieve controlled electrical behaviour by leveraging uniform boron doping.
   - Applied as an active layer support in CMOS devices to optimise charge carrier mobility through precise (100) orientation.

2.       Semiconductor Process R&D
   - Used as a test sample in process development for doping experiments, attaining repeatable experimental outcomes with controlled resistivity.
   - Employed in equipment calibration for etching and deposition processes by capitalising on its consistent material properties.

200 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 1-100 ohm·cm Packing

The wafers are packaged individually in anti-static, clean-room grade containers with foam padding to minimise mechanical stress. They are sealed in moisture-resistant bags and stored under temperature-controlled conditions to prevent contamination. Custom packaging options, including inert gas purging, are available to suit specific handling requirements during transport and storage.

Frequently Asked Questions

Q1: How does the boron doping influence substrate performance?
A1: Boron doping adjusts the resistivity between 1-100 ohm·cm and enhances P-type conductivity, ensuring optimal electrical performance during device fabrication. The uniform doping level also contributes to consistent behaviour across the wafer surface.

Q2: What benefits does the (100) orientation offer for semiconductor processing?
A2: The (100) crystallographic orientation aligns with standard processing techniques, facilitating well-controlled oxidation and etching processes. This orientation aids in achieving dimensional accuracy in microfabrication.

Q3: What should be considered for storage to maintain wafer integrity?
A3: Wafers must be stored in a temperature-controlled, low-humidity environment using anti-static packaging. Preventing exposure to contaminants and mechanical shocks is essential for preserving the substrate’s integrity.

Additional Information

Silicon wafers, particularly those doped with boron, play a critical role in semiconductor device production. Their controlled resistivity and crystal orientations are pivotal for ensuring predictable electronic behaviour in fabricated devices. Recent advancements in doping techniques and quality control measures have improved material uniformity and performance reliability.

Understanding the interplay between dopant concentration, crystal orientation, and substrate properties is essential for optimising semiconductor manufacturing. Continued research in materials science is enhancing the integration of such substrates in various industrial applications, driving improvements in device efficiency and scalability.