CY9487 100 mm Intrinsic Silicon Wafer Substrate Prime Grade (100), SSP, >20,000 ohm·cm

100 mm Intrinsic Silicon Wafer Substrate Prime Grade (100), SSP, >20000 ohm·cm Description

This intrinsic silicon wafer is fabricated from high-purity, monocrystalline silicon with a precisely aligned (100) orientation. Its high resistivity of over 20000 ohm·cm reduces free carrier concentrations, thereby minimising leakage currents during semiconductor processing. The substrate’s low defect level and uniform surface finish support critical device manufacturing, ensuring dimensional consistency and predictable electrical behaviour during thermal and chemical processing steps.

100 mm Intrinsic Silicon Wafer Substrate Prime Grade (100), SSP, >20000 ohm·cm Applications

1.       Electronics and Semiconductor Fabrication
   - Used as a substrate in integrated circuit manufacturing to achieve controlled charge carrier dynamics by leveraging high resistivity, which minimises leakage in sensitive devices.
   - Applied in photolithographic processes to attain a uniform surface, allowing precise pattern transfer and reduced defect density.

2.       Research and Development
   - Employed as a base material in experimental semiconductor studies to analyse intrinsic material properties, thereby enhancing understanding of silicon behaviour under varied processing conditions.
   - Used in prototype device fabrication to validate process innovations, reducing variability by utilising a well-characterised substrate.

100 mm Intrinsic Silicon Wafer Substrate Prime Grade (100), SSP, >20000 ohm·cm Packing

Packaged in a clean-room approved antistatic container with custom-cut foam inserts, the wafer is sealed in a nitrogen-purged envelope to prevent moisture and particulate contamination. Storage conditions should maintain a temperature-controlled, low-humidity environment. Custom packaging solutions, including vacuum-sealing and specialised carrier trays, are available on request to meet specific handling requirements.

Frequently Asked Questions

Q1: What measurement techniques confirm the wafer’s high resistivity?
A1: The wafer undergoes four-point probe testing and surface resistivity mapping during production. These techniques ensure that the resistivity meets the >20000 ohm·cm specification, validating the intrinsic quality required for semiconductor processes.

Q2: How is the wafer’s surface quality ensured during fabrication?
A2: Surface quality is monitored through interferometric profilometry and optical microscopy, which detect contaminants and irregularities. This strict quality control minimises defects that could affect device performance during subsequent high-precision processing.

Q3: Can the substrate parameters be customised for specific applications?
A3: Customisation options are available upon request, including tailored wafer thickness and tailored surface finish protocols. This flexibility supports developments in device-specific process integration and performance optimisation.

Additional Information

Intrinsic silicon wafers are foundational in semiconductor manufacturing due to their minimal charge carrier concentration. The defined (100) crystallographic orientation aids in achieving uniform etching and deposition during device fabrication, thereby enhancing process reproducibility. These wafers are integral in both mainstream and experimental processes, providing a consistent platform for a variety of semiconductor applications.

The stringent quality control protocols employed during fabrication underscore the importance of precise material properties in advanced electronic applications. Understanding these properties assists engineers and researchers in optimising process parameters for improved device performance while ensuring that the wafers meet critical industry standards.