CY9488 100 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm

100 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Description

This silicon wafer substrate features a 100 mm diameter, prime-grade surface, and a (100) crystallographic orientation. B-doping establishes a resistivity range of 10-20 ohm·cm, impacting carrier concentration and device performance. The substrate is designed for semiconductor fabrication processes that require dimensional accuracy and controlled electrical characteristics. Its low defect density and uniform doping enhance compatibility with standard microfabrication equipment and processing techniques.

100 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Applications

Electronics:
- Used as a substrate in integrated circuit fabrication to achieve defined dopant activation by utilising uniform resistivity.
- Applied as the base material in CMOS devices to ensure controlled electrical properties through precise crystallographic orientation.

Industrial:
- Employed as a foundation in MEMS devices to accomplish dimensional stability by using the substrate’s uniform surface finish.
- Utilised in solar cell production to facilitate efficient charge transport by capitalising on consistent doping levels.

100 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Packing

The wafers are packaged in anti-static carriers and foam-lined boxes to prevent mechanical damage and contamination. They are sealed in moisture barrier packaging and stored in a temperature-controlled environment. Strict handling protocols, including the use of cleanroom conditions, help mitigate particulate exposure. Custom packaging solutions are available to meet specific processing and transport requirements.

Frequently Asked Questions

Q1: How does the uniformity of boron doping affect substrate performance?
A1: Uniform boron doping ensures a consistent resistivity across the wafer, which is crucial for predictable electrical behaviour in semiconductor processes. This uniformity minimises variation in device performance and supports effective dopant activation during thermal processing.

Q2: What measures are recommended for handling this wafer substrate?
A2: Handling requires cleanroom conditions and anti-static precautions to avoid contamination and mechanical damage. It is advisable to use specialised wafer tweezers and maintain strict control over ambient particle levels to preserve substrate integrity.

Q3: In what way does the (100) crystallographic orientation benefit semiconductor fabrication?
A3: The (100) orientation provides a surface structure that supports optimal oxidation and etching processes, which is vital for controlled gate oxide formation in advanced microelectronic devices.

Additional Information

Silicon wafers constitute a fundamental component in microelectronics, serving as the base for integrated circuit fabrication and a variety of semiconductor devices. The controlled doping techniques used in these substrates are critical for achieving the desired electrical characteristics necessary for high-performance electronic applications. Maintaining uniformity in dopant distribution plays a significant role in ensuring process reproducibility.

Understanding the influence of crystallographic orientation on semiconductor processing is essential. The (100) orientation, for instance, promotes consistent surface reactions during oxidation and etching, which benefits device reliability and scaling in modern fabrication technologies.