CY9491 150 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm

150 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Description

This substrate is manufactured from high-purity silicon with controlled boron doping to achieve a resistivity range of 10-20 ohm·cm. The (100) crystallographic orientation provides a uniform surface ideal for integrated circuit processes. The 150 mm diameter supports standard semiconductor fabrication equipment, ensuring compatibility with existing processing tools. Quality control includes optical inspection for surface uniformity and defect minimisation.

150 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Applications

Electronics and Semiconductor Manufacturing
- Used as a substrate in integrated circuits to achieve uniform dopant distribution by leveraging controlled resistivity, enhancing device performance.
- Applied in memory chip fabrication to ensure consistent electrical characteristics through precise crystallographic alignment.

Optoelectronic Devices
- Employed as a base in sensor arrays to improve signal uniformity by leveraging material purity and controlled surface finish, ensuring accurate light response.

150 mm P Type (B-doped) Silicon Wafer Substrate Prime Grade (100), SSP, 10-20 ohm·cm Packing

The wafers are encased in an anti-static, cushioned tray placed within a sealed, moisture-resistant container to prevent particulate contamination and mechanical damage. Storage is recommended in a clean, temperature-controlled environment. Additional customisation options, such as individually labelled carriers and desiccant inclusion, are available to meet specific handling requirements.

Frequently Asked Questions

Q1: How does the specified resistivity range affect electronic applications?
A1: The resistivity range of 10-20 ohm·cm supports controlled carrier concentration, ensuring uniform electrical characteristics crucial for device performance in semiconductor applications. It aids in consistent threshold voltage control and reduces variability during circuit fabrication.

Q2: What quality control measures are implemented to verify substrate flatness?
A2: Surface flatness is monitored using optical profilometry, which captures precise measurements to ensure minimal warpage and defects. This process is critical in maintaining interface consistency during subsequent processing steps in integrated circuit manufacturing.

Q3: What are the recommended storage conditions for these wafers?
A3: The wafers should be stored in a clean, temperature-controlled environment with low humidity. Protective packaging, such as anti-static trays and moisture-resistant containers, is essential to prevent contamination and mechanical damage during storage.

Additional Information

Silicon wafers serve as the fundamental building block in semiconductor device fabrication. The precise control of dopant levels and crystal orientation is critical in determining the electrical properties required during device processing. P Type wafers, which involve boron doping, are widely used in complementary metal-oxide-semiconductor (CMOS) processes and serve as a substrate for numerous electronic components.

Advances in fabrication techniques, including chemical vapour deposition and advanced etching methods, have improved the overall quality and consistency of these substrates. Understanding the interplay between dopant concentration, resistivity, and crystallographic orientation is crucial for optimising device performance in high-density integrated circuits.