CY9493 Silicon Wafer with 50 nm Silver P-Type, Dia. 4 inch x 525 μm thick

Silicon Wafer with 50 nm Silver P-Type, Dia. 4 inch x 525 μm thick Description

Silicon Wafer with 50 nm Silver P-Type, Dia. 4 inch x 525 μm thick is a p-type silicon substrate featuring a uniformly deposited 50 nm silver layer. The 4-inch diameter and 525 μm thickness are standard dimensions compatible with semiconductor processing equipment. The silver coating enhances localized conductivity and interface characteristics, ensuring controlled dopant diffusion during device fabrication while supporting advanced integration techniques.

Silicon Wafer with 50 nm Silver P-Type, Dia. 4 inch x 525 μm thick Applications

Electronics and Semiconductor Manufacturing
• Used as a substrate in integrated circuits to achieve precise electrical performance by leveraging the controlled silver coating.
• Applied in photovoltaic device assembly to improve contact formation and uniform conductivity by utilising the p-type properties.

Industrial Processing
• Employed in sensor fabrication to enhance response accuracy through consistent material properties, thereby improving signal integrity in industrial monitoring systems.

Silicon Wafer with 50 nm Silver P-Type, Dia. 4 inch x 525 μm thick Packing

The wafer is packaged in an anti-static, rigid carrier with foam padding to reduce mechanical stress and contamination. It is sealed in a moisture-barrier bag with desiccant inserts and placed in a shock-absorbent container. The packaging supports custom labelling and compartmentalisation to meet handling and storage requirements. Controlled storage conditions and standardised anti-contamination measures ensure the substrate remains pristine until processing.

Frequently Asked Questions

Q1: How does the 50 nm silver coating affect the wafer's processing characteristics?
A1: The uniform 50 nm silver layer aids in establishing controlled dopant diffusion during thermal processes. It provides a consistent interface that can impact contact resistance and conductivity, essential during device fabrication.

Q2: What considerations are made for handling a 4-inch, 525 μm thick wafer during processing?
A2: The wafer’s dimensions require compatibility with standard wafer handling tools, and the inherent thinness calls for careful manipulation to avoid fracture. Precision alignment tools and anti-static measures are recommended.

Q3: How does SAM verify the quality of the silver deposition and the overall substrate?
A3: SAM employs surface metrology and compositional analysis, including electron microscopy and X-ray diffraction, to confirm uniform silver thickness and clear crystallographic structure. These steps help identify deviation from specified parameters early in the production cycle.

Additional Information

Silicon wafers serve as the backbone for semiconductor device fabrication. Their properties, such as controlled doping and surface uniformity, are critical to the performance of integrated circuits and photovoltaic cells. Advanced silicon wafer technology continuously evolves to address the demanding requirements of modern microelectronics.

The integration of a thin silver layer into silicon wafers introduces additional process control, enabling more predictable electronic characteristics. Research in this field often focuses on optimising deposition techniques and ensuring consistency across batches, which is crucial for high-throughput manufacturing environments.