CY9494 Silicon Wafer with 50 nm Silver P-Type, Dia. 50 mm x 525 μm thick

Silicon Wafer with 50 nm Silver P-Type, Dia. 2 inch x 525 μm thick Description

The silicon wafer incorporates a 50 nm silver P-Type coating, with a diameter of 2 inches and a thickness of 525 μm. The silver layer enhances electrical connectivity while the controlled doping supports specific circuit integration. The standard dimensions ensure compatibility with conventional semiconductor processing tools. Quality control measures, including surface inspection and defect mapping, help achieve consistent electrical performance required for device prototyping and research applications.

Silicon Wafer with 50 nm Silver P-Type, Dia. 2 inch x 525 μm thick Applications

Electronics
- Used as an active substrate in photovoltaic cells to improve charge carrier dynamics by leveraging the uniform silver doping.
- Applied as a fundamental layer in integrated circuits to achieve controlled conductivity by leveraging precise thickness tolerance. 

Industrial
- Used as a substrate in semiconductor sensors to achieve accurate signal modulation by leveraging consistent doping and fabrication standards. 

Research
- Employed as a test sample in semiconductor process development to evaluate doping efficiency by leveraging the controlled deposition of silver.

Silicon Wafer with 50 nm Silver P-Type, Dia. 2 inch x 525 μm thick Packing

The wafers are individually secured in static-dissipative carriers and enclosed in sealed containers to prevent contamination. Custom foam inserts cushion the wafers against mechanical shock during transit. It is recommended that the product be stored in a dry, temperature-controlled environment. Custom labelling and packaging configurations are available to meet specific handling protocols for sensitive research applications.

Frequently Asked Questions

Q1: How is the 50 nm silver layer verified?
A1: The 50 nm silver layer is verified using surface metrology techniques, including scanning electron microscopy (SEM) and ellipsometry, calibrated against industry standards to ensure uniform deposition across the wafer.

Q2: How does the wafer support semiconductor device fabrication?
A2: The precise dimensions and controlled P-type doping facilitate integration into semiconductor processes. Compatibility with standard processing equipment ensures reproducible electrical characteristics and optimised device performance during fabrication.

Q3: What are best practices for storing these wafers?
A3: Wafers should be stored in temperature-controlled, low-humidity conditions within static-free containers. This minimises the risk of physical or electrostatic damage and maintains surface integrity for subsequent processing.

Additional Information

Silicon wafers are fundamental components in semiconductor fabrication, serving as the base for integrated circuits and various electronic devices. The integration of a silver coating as a dopant modifies the electrical properties, which is critical for tailoring device performance. Such modifications require precise control over deposition parameters and comprehensive defect analysis, ensuring the wafer meets stringent research and development standards.

Recent trends in semiconductor processing have focused on achieving nanoscale uniformity in metal coatings and doping, which is essential for advancing microelectronic performance. Engineers incorporate rigorous quality control processes, including in-line optical inspections and advanced metrology, to maintain the consistency required for high-performance manufacturing and research applications.