CY9496 Ultra-Flat Silicon Wafer P-Type, Dia. 6 inch x 675 μm thick

Ultra-Flat Silicon Wafer P-Type, Dia. 6 inch x 675 μm thick Description

The Ultra-Flat Silicon Wafer P-Type, Dia. 6 inch x 675 μm thick is a silicon substrate engineered for semiconductor and microelectronic applications. Its 6-inch diameter and 675 μm thickness comply with established equipment standards, while controlled P-Type doping optimises charge carrier concentration. The wafer undergoes a combination of chemical and mechanical planarisation to minimise surface roughness. Its smooth surface facilitates accurate lithographic patterning and process integration in device fabrication.

Ultra-Flat Silicon Wafer P-Type, Dia. 6 inch x 675 μm thick Applications

Electronics and Semiconductor Manufacturing
- Used as a substrate in integrated circuit fabrication to achieve precise patterning by leveraging its ultra-flat surface.
- Applied as the base material in solar cell production to ensure efficient photovoltaic conversion due to its controlled doping.

Research and Development
- Employed in material science experiments to analyse electronic properties by taking advantage of its uniform surface.
- Utilised in sensor fabrication to achieve accurate electro-mechanical responses by capitalising on its stable doping profile.

Ultra-Flat Silicon Wafer P-Type, Dia. 6 inch x 675 μm thick Packing

The wafer is packaged in a static-dissipative container with a foam insert to protect against physical shock and contamination. It is enclosed within an anti-static pouch and sealed in a moisture-resistant package. Temperature-controlled storage is recommended to preserve material integrity. Custom packaging options, such as cleanroom-compatible containers and specific labelling requirements, can be arranged upon request.

Frequently Asked Questions

Q1: What processing steps ensure the wafer's surface flatness?
A1: The wafer undergoes chemical-mechanical polishing followed by interferometric inspection. These steps minimise micro-roughness and ensure that the surface meets the stringent flatness required for semiconductor lithography and device integration.

Q2: How does the P-Type doping influence electrical performance?
A2: The controlled P-Type doping adjusts the carrier concentration, which is crucial for achieving target electrical properties in semiconductor devices. This tuning helps reduce leakage currents and supports consistent performance under various processing conditions.

Q3: What are the recommended storage conditions for the silicon wafer?
A3: The wafer should be stored in a temperature-controlled, low-humidity environment using static-free packaging and moisture barrier films. Proper storage minimises contamination and preserves the precise surface characteristics necessary for subsequent processing.

Additional Information

Silicon substrates are essential for advanced semiconductor device fabrication due to their crystalline stability and well-understood electronic properties. The uniformity of silicon's crystal structure supports high-density integration and reliable performance across various manufacturing processes.

Advances in planarisation and doping techniques continue to improve wafer flatness and electrical uniformity. These improvements are key as manufacturers push toward smaller process nodes and more intricate device architectures. The ongoing refinement in fabrication methods aids research and development, enabling more accurate simulations and experimental validations in material science.