CY9506 Silicon Wafer Type P (100) Dia. 1 inch, SSP

Silicon Wafer Type P (100) Dia. 1 inch, SSP Description

Silicon Wafer Type P (100) Dia. 1 inch, SSP is a P-type, single side polished silicon wafer with a (100) orientation and a 1-inch diameter. Manufactured via controlled doping and thermal oxidation, its uniform crystallography is critical for semiconductor device fabrication. The wafer’s dimensions ensure compatibility with standard processing tools, while its flat surface and controlled defect density facilitate precise patterning and electrical characterisation.

Silicon Wafer Type P (100) Dia. 1 inch, SSP Applications

1.       Electronics and Semiconductor Applications
   - Used as a substrate in integrated circuit fabrication to achieve uniform dopant incorporation by leveraging its (100) orientation, leading to reduced variability in device performance.
   - Applied in photolithography processes where the wafer’s flatness supports high-pattern fidelity under standard thermal cycles.

2.       Industrial and Research Instrumentation
   - Employed as a sensor platform in laboratory test structures to promote consistent electrical measurements by utilising its controlled defect density and dopant distribution.
   - Used in experimental semiconductor process development to evaluate the impact of crystallographic orientation on device physics, thereby improving reproducibility in research setups.

Silicon Wafer Type P (100) Dia. 1 inch, SSP Packing

The wafer is packaged in anti-static pouches and secured within cushioned carriers to minimise mechanical shock and contamination. The packaging includes moisture barrier bags and is designed for storage in clean, temperature-controlled environments. Custom packaging options, such as labelled compartments and vacuum sealing, are available to meet specific handling requirements.

Frequently Asked Questions

Q1: How does the (100) orientation affect process uniformity in semiconductor fabrication?
A1: The (100) crystallographic orientation aligns the atomic lattice uniformly, which helps in achieving consistent dopant diffusion and etching profiles. This control minimises processing variations and optimises device performance during subsequent fabrication steps.

Q2: What quality control measures are integrated during wafer production?
A2: Quality control includes in-line atomic force microscopy and defect density evaluations during the Czochralski process. These methods ensure the wafer’s surface flatness and homogeneity, which are essential for accurate semiconductor processing.

Q3: Can the wafer be adapted for specialised semiconductor test structures?
A3: Yes, the wafer’s standard 1-inch diameter is designed to be compatible with various semiconductor processing tools. Custom processing options, including tailored dopant profiles or additional surface treatments, can be discussed to support specialised test structures.

Additional Information

Silicon wafers are a foundational component in semiconductor device fabrication. Their precise crystallographic orientation and controlled doping are essential for ensuring performance uniformity in electronic devices. Advances in epitaxial growth and surface characterisation have led to improved wafer quality, aiding researchers in exploring novel electronic properties.

In materials science, silicon remains a critical substrate due to its well-understood physical properties and compatibility with various processing techniques. Deepening the understanding of silicon wafer fabrication techniques contributes to broader applications in microelectronics, optoelectronics, and sensor technology.