CY9509 Silicon Wafer Type P (100) Dia. 4 inch, SSP

Silicon Wafer Type P (100) Dia. 4 inch, SSP Description

The Silicon Wafer Type P (100) Dia. 4 inch, SSP is a p-type, boron-doped substrate with a well-defined (100) orientation. Its 4-inch diameter is optimised for integration into standard semiconductor processing equipment. The wafer’s controlled crystallography and minimal defect density support consistent electrical performance and reliable process replication during device fabrication.

Silicon Wafer Type P (100) Dia. 4 inch, SSP Applications

Electronics and Semiconductor Applications
- Used as a substrate in microchip fabrication to achieve uniform doping profiles by leveraging its (100) orientation.
- Applied in sensor manufacturing to ensure consistent electrical behaviour through its controlled crystallinity.

Industrial Applications
- Employed as a platform for integrated circuit testing to facilitate defect analysis by utilising its precise surface finish.

Research and Development
- Serves as a base for semiconductor experimentation to evaluate process variations by capitalising on its standardised SSP processing.

Silicon Wafer Type P (100) Dia. 4 inch, SSP Packing

The wafer is individually sealed in an anti-static, foam-lined container and placed in a dust-free pouch to prevent mechanical stress and contamination. Temperature and humidity controls are recommended during storage and transit. Clients may request customised packaging options, including vacuum-sealed or compartmentalised arrangements, to further safeguard against contamination.

Frequently Asked Questions

Q1: What quality control tests are performed during wafer production?
A1: SAM uses X-ray diffraction and optical inspection to assess the crystallographic orientation and surface integrity. This ensures that the wafer maintains uniform doping profiles and minimal defect density, which are critical for semiconductor device fabrication.

Q2: How does the (100) orientation benefit semiconductor processing?
A2: The (100) orientation supports uniform doping and reduces etching variability during device patterning. These properties simplify process integration with standard equipment while enhancing the reproducibility of electrical characteristics.

Q3: What storage conditions are necessary for these wafers?
A3: Wafers should be stored in a controlled, low-humidity environment with anti-static packaging. This prevents contamination and physical damage during transit, ensuring the wafer retains its specified electrical and structural properties.

Additional Information

Silicon wafers serve as the foundational material in semiconductor manufacturing, where controlled dopant distribution and crystallographic orientation are critical. Detailed characterisation methods, such as X-ray diffraction and electron microscopy, support the assessment of wafer properties like resistivity and surface uniformity, which are essential for reliable device performance.

Advancements in crystal growth and processing techniques continue to refine the quality and dimensional control of silicon wafers. These improvements enhance the consistency of semiconductor devices and enable further miniaturisation and performance optimisation in microelectronics research and production.