SC9902 Recrystallized Silicon Carbide Plate 10 mm thick

Recrystallized Silicon Carbide Plate 10 mm thick Description

Recrystallized Silicon Carbide Plate 10 mm thick is produced from high-purity (>99%) SiC with a density of approximately 2.7 g/cm³. With precise dimensional control and an operating temperature capacity of up to 1650 ℃, the plate is designed for applications where thermal management and structural integrity are critical. Its recrystallized structure minimises defects, supporting consistent performance in industrial and electronic processes.

Recrystallized Silicon Carbide Plate 10 mm thick Applications

Electronics and Semiconductor Processing
- Used as a substrate in power electronic devices to achieve effective heat dissipation by leveraging its high-purity composition and stable thermal characteristics.
- Employed in semiconductor equipment to support controlled thermal cycling, minimising material expansion issues through its consistent microstructure.

High-Temperature Industrial Systems
- Applied as structural components in furnace linings to mitigate thermal deformation by utilising its dimensional stability.
- Serves as a thermal management element in high-temperature processing systems to support sustained operation under elevated thermal loads.

Recrystallized Silicon Carbide Plate 10 mm thick Packing

The plate is packaged in sturdy, anti-static containers with foam cushioning to reduce mechanical shock. Protective wrapping minimises particulate contamination during transit. Plates are stored in temperature-controlled conditions to maintain material integrity. Custom packaging options, including moisture barrier seals and individualised labelling, are available to meet specific handling and storage requirements.

Frequently Asked Questions

Q1: How does the high-purity SiC composition affect the plate’s thermal performance?
A1: The high-purity SiC minimises interference from impurities, ensuring stable thermal management up to 1650 ℃. This uniform composition supports consistent heat dissipation in high-temperature industrial environments.

Q2: What quality control processes are employed during fabrication?
A2: SAM utilises detailed microstructural evaluations combined with X-ray diffraction analysis to detect grain orientation and defect levels. These measurements help verify adherence to technical specifications in each production batch.

Q3: Can the plate dimensions be customised for specific engineering applications?
A3: Yes, customisation options are available for thickness and other dimensions. Customers may request tailored sizes while ensuring the material’s inherent properties remain consistent.

Additional Information

Silicon Carbide ceramics, known for their significant thermal conductivity and chemical inertness, are widely utilised in environments that demand resistance to thermal shock and corrosive conditions. The material’s physical properties support performance in applications ranging from power electronics to industrial furnace components.

Advancements in recrystallisation techniques have refined the microstructure of SiC, reducing grain boundary defects and enhancing mechanical stability. This makes the ceramic plate particularly suitable for applications where precision and durability under high-temperature conditions are critical.