SC9905 Recrystallized Silicon Carbide Plate 30 mm thick

Recrystallised Silicon Carbide Plate 30 mm thick Description

Recrystallised Silicon Carbide Plate 30 mm thick is fabricated from SiC with a purity of ≥99% and exhibits a density of approximately 2.7 g/cm³. The plate's substantial thickness and inherent ceramic properties allow it to endure elevated temperatures up to 1650 ℃. This formulation provides controlled grain structure and minimal inclusions, which are vital for maintaining structural integrity and thermal stability in demanding industrial environments.

Recrystallised Silicon Carbide Plate 30 mm thick Applications

High Temperature Industrial Applications
- Used as a refractory component in furnace liners to achieve stable thermal management by leveraging its ability to withstand temperatures up to 1650 ℃.
- Applied as a structural element in heat exchangers to maintain dimensional stability and resist thermal shock.

Semiconductor and Electronic Manufacturing
- Used as a substrate in high-temperature processing equipment to achieve consistent performance by leveraging its high-purity composition and robust dimensional characteristics.

Recrystallised Silicon Carbide Plate 30 mm thick Packing

The product is packaged within an anti-static, foam-lined container to mitigate mechanical stress and prevent surface contamination. Protective wrapping and inert barrier films secure the plate during transit. It is recommended to store the material in a dry, temperature-controlled environment to safeguard against moisture and thermal fluctuations. Custom packaging options, including specialised labels and compartmentalisation, are available based on specific handling and storage requirements.

Frequently Asked Questions

Q1: How does the ≥99% purity of the SiC plate influence its operational performance?
A1: The high purity minimises impurity-induced defects that could weaken the structure under thermal stress. This results in a more uniform microstructure, essential for maintaining consistent mechanical integrity during high-temperature operation.

Q2: Can the plate operate continuously at temperatures near 1650℃?
A2: The specified operating temperature indicates that the plate is capable of withstanding prolonged high-temperature exposure. However, designers should consider the operational environment, including thermal cycling, to ensure long-term stability.

Q3: What precautions should be taken when cleaning the SiC plate?
A3: Clean the plate using non-abrasive methods with deionised water and mild solvents. Avoid harsh chemicals that can alter the surface properties. A controlled cleaning process is recommended to maintain the integrity required for high-temperature applications.

Additional Information

Silicon carbide ceramics are recognised for their exceptional thermal stability and chemical inertness, making them suitable for high-performance industrial applications. The recrystallisation process refines the grain structure, reducing internal stresses and mitigating the risk of crack propagation under thermal shock conditions.

Understanding the microstructural evolution during sintering and recrystallisation is crucial for material scientists. Optimised processing parameters help achieve uniform properties, essential for applications involving high thermal loads and corrosive environments. This knowledge aids in the development of materials that perform consistently under stringent operational conditions.