SC9907 Recrystallized Silicon Carbide Beam

Recrystallized Silicon Carbide Beam Description

Recrystallized Silicon Carbide Beam is an advanced ceramic form of SiC with a minimum purity of 99% and an approximate density of 2.7 g/cm³. Its beam structure supports precise machining and integration into assemblies where dimensional accuracy is critical. The material maintains stability up to 1650 ℃, making it suitable for high-temperature applications. Customised dimensions allow engineers to address specific design constraints in various industrial and electronic systems.

Recrystallized Silicon Carbide Beam Applications

Industrial Applications
- Utilised as a structural component in high-temperature processing equipment to counteract thermal expansion by leveraging SiC’s stability and controlled microstructure.

Electronics Applications
- Applied as a substrate in power modules to manage thermal loads by utilising the material’s high purity and beam form for precise dimensional control.

Recrystallized Silicon Carbide Beam Packing

The beam is packaged in a custom-designed protective casing with anti-static measures to minimise contamination and mechanical damage. It is secured in shock-absorbent foam within a moisture-resistant envelope. Storage conditions recommend a dry, temperature-controlled environment to maintain the material's integrity. Custom packaging options, including tailored container sizes and additional cushioning, are available upon request.

Frequently Asked Questions

Q1: How is the silicon carbide purity confirmed for the beam?
A1: Purity is verified through X-ray diffraction and energy-dispersive spectroscopy to ensure the material meets or exceeds the ≥99% threshold. These methods provide a detailed analysis of the elemental composition and crystalline structure, which are critical for high-temperature applications.

Q2: What considerations apply when customising the beam’s dimensions?
A2: Customisation requires precise machining tolerances and an understanding of thermal expansion behaviour. Engineers must consider the specific application environment and mechanical load requirements to ensure that the final dimensions maintain structural integrity under operational stress.

Q3: How does the operating temperature limit influence processing decisions?
A3: The operating temperature limit of ≤1650 ℃ defines the material’s thermal resistance and dictates the processing environment. This parameter guides the selection of compatible fixtures and protective coatings during high-temperature applications, ensuring that the beam maintains its integrity without thermal degradation.

Additional Information

Silicon carbide ceramics are widely studied due to their high chemical inertness and thermal stability. The crystalline structure of SiC offers a balance of hardness and lightweight properties, making it a preferred choice for applications subjected to thermal and mechanical stress. Researchers continue to explore optimised sintering techniques to further enhance its microstructural uniformity.

In industrial settings, silicon carbide materials serve critical roles where thermal management and structural support are essential. Advancements in characterisation techniques, such as SEM and XRD, have allowed for improved quality control, ensuring that products like the Recrystallized Silicon Carbide Beam meet rigorous technical standards for demanding applications.