SC9908 Recrystallized Silicon Carbide Beam 30 x 30 mm

Recrystallized Silicon Carbide Beam 30 x 30 mm Description

Recrystallized Silicon Carbide Beam 30 x 30 mm is produced from SiC with a purity of ≥99%. Its precise 30 x 30 mm dimensions facilitate compatibility with standard high-temperature processing setups. The material’s density (~2.7 g/cm³) contributes to its mechanical stability and thermal inertia. The recrystallized microstructure minimises defect density, supporting applications that demand chemical inertness and sustained thermal endurance.

Recrystallized Silicon Carbide Beam 30 x 30 mm Applications

Industrial Applications
- Used as a structural component in high-temperature furnaces to mitigate thermal expansion issues by leveraging its high operating temperature tolerance, thus maintaining operational stability.
- Applied as a heat management element in processing equipment to counteract heat-induced deformations by utilising its high density and chemical inertness, thereby enhancing process reliability.

Electronics Applications
- Used as an insulating substrate in power electronic modules to address thermal dissipation challenges by leveraging its stable microstructure, ensuring consistent performance under high power conditions.
- Applied as a support material in high-temperature sensor assemblies to combat signal drift due to thermal stress by leveraging its dimensional stability and purity, thereby preserving measurement accuracy.

Recrystallized Silicon Carbide Beam 30 x 30 mm Packing

The Recrystallized Silicon Carbide Beam 30 x 30 mm is securely packaged in a moisture-resistant, anti-static container with internal foam cushioning to prevent mechanical damage. The packaging design incorporates particulate barriers and controlled atmosphere features to mitigate contamination risks. Recommended storage conditions include low humidity and temperature-controlled environments. Custom packaging options, including tailored labelling and additional protective measures, are available upon request.

Frequently Asked Questions

Q1: What impact does the high-purity (≥99%) of SiC have on its performance?
A1: The high-purity level of SiC reduces impurity-related defects, resulting in improved structural integrity and thermal stability. This is critical for maintaining consistent dimensional and mechanical performance, especially in high-temperature environments.

Q2: How does the operating temperature of ≤1650 ℃ affect application suitability?
A2: An operating temperature of ≤1650 ℃ allows the material to maintain its structure under extreme thermal conditions. This property makes it suitable for components subjected to high heat, ensuring minimal thermal degradation over prolonged use.

Q3: Can deviations in the 30 x 30 mm dimensions impact the beam’s functionality?
A3: Dimensional accuracy is essential for integration with precision processing equipment. Deviations may lead to mismatches in assembly or altered heat distribution, potentially affecting overall system performance.

Additional Information

Silicon Carbide (SiC) is widely recognised in materials science for its exceptional thermal and chemical stability. Its unique crystal structure enables performance in conditions where traditional ceramics may fail, making it a material of choice for applications requiring high temperature resistance and inertness against corrosive environments.

Recent advancements in recrystallisation techniques have further enhanced the microstructural uniformity of SiC components. This progress supports applications across industrial and electronic sectors by ensuring that components perform consistently even under rapid thermal cycling and high mechanical stresses.