SC9909 Recrystallized Silicon Carbide Beam 30 x 40 mm

Recrystallized Silicon Carbide Beam 30 x 40 mm Description

Recrystallized Silicon Carbide Beam 30 x 40 mm is manufactured using a controlled recrystallisation process that results in a uniform microstructure optimal for high-temperature applications. The beam is composed of SiC with a minimum purity of 99%, and its density of approximately 2.7 g/cm³ ensures structural stability. The fixed dimensions facilitate reliable integration into ceramic assemblies, particularly in environments that demand resistance to thermal stresses and mechanical deformation.

Recrystallized Silicon Carbide Beam 30 x 40 mm Applications

Industrial Applications
- Used as a heat management component in refractory furnaces to maintain thermal stability by leveraging its high operating temperature tolerance.
- Applied as a structural element in high-temperature processing equipment to sustain dimensional consistency through controlled density.

Electronics Applications
- Serves as a substrate in power electronics to support stable performance by utilising its uniform composition and resistance to thermal cycling.
- Frequently used for circuit components in extreme thermal environments to maintain integrity and performance through its high purity.

Ceramic Manufacturing
- Employed as a building block in refractory ceramic systems to uphold structural integrity under thermal stress by utilising its consistent dimensions.
- Applied in fabrication processes where thermal endurance is critical, benefiting from the material’s capacity to withstand elevated temperatures.

Recrystallized Silicon Carbide Beam 30 x 40 mm Packing

The Recrystallized Silicon Carbide Beam is packaged in foam-lined, anti-static containers to minimise mechanical impact and prevent particulate contamination. Desiccant materials are included to control moisture during storage. The packaging design supports temperature-controlled storage, and customisation options are available to address specific transportation and storage conditions.

Frequently Asked Questions

Q1: How does the ≥99% purity level affect the performance of the silicon carbide beam?
A1: The high purity reduces the presence of chemical impurities and minimises defect concentrations. This contributes to improved structural integrity and limits microcrack formation during thermal cycling, enhancing the beam's performance in ceramic and high-temperature applications.

Q2: What storage conditions are recommended to preserve the properties of the silicon carbide beam?
A2: It is advisable to store the beam in a dry, temperature-controlled environment. The provided anti-static and cushioned packaging minimises mechanical shocks and exposure to moisture, thereby maintaining the material’s structural and thermal properties over time.

Q3: Can the surface finish or dimensions of the beam be customised for specific applications?
A3: Although the standard dimensions are 30 x 40 mm, surface finishing processes such as additional machining or polishing are available upon request. Consultation with Stanford Advanced Materials technical staff will determine feasible adjustments to accommodate specific integration requirements.

Additional Information

Silicon carbide (SiC) is recognised for its high thermal conductivity and resistance to chemical corrosion. Its recrystallisation process refines the microstructure, reducing defects and enhancing performance under thermal stress. Such properties are critical in applications where durability and thermal stability are essential.

Advances in ceramic material science continually point to the benefits of using refined SiC components for high-temperature applications. The integration of detailed quality control measures, including microscopic surface analysis, supports the development of manufacturing processes that ensure consistent material properties for a range of industrial and electronic applications.