SC9910 Recrystallized Silicon Carbide Beam 40 x 40 mm

Recrystallized Silicon Carbide Beam 40 x 40 mm Description

Recrystallized Silicon Carbide Beam 40 x 40 mm is fabricated from SiC using a controlled recrystallisation process that refines its microstructure and minimises grain-boundary imperfections. The 40 x 40 mm dimension enables compatibility with standard industrial fixtures, while its measured density of ~2.7 g/cm³ contributes to its structural performance. This beam is engineered to maintain stability under high thermal loads and rigorous mechanical conditions.

Recrystallized Silicon Carbide Beam 40 x 40 mm Applications

Industrial Applications
- Used as a refractory component in high-temperature furnace assemblies to maintain structural integrity during thermal cycling by leveraging its recrystallised microstructure.
- Applied as a wear-resistant part in processing equipment to extend operational life by reducing microstructural degradation under stress.

Electronics Applications
- Used as a heat spreader in semiconductor manufacturing setups to promote uniform thermal distribution by exploiting its ability to withstand elevated temperatures.

Recrystallized Silicon Carbide Beam 40 x 40 mm Packing

The beam is packaged using layered protective materials including anti-static foam inserts and rigid, shock-absorbing containers to prevent mechanical damage and contamination. The product is stored in a moisture-controlled, temperature-stable environment with clear batch labelling. Custom packaging arrangements can be provided to accommodate specific handling and storage requirements.

Frequently Asked Questions

Q1: How does the recrystallisation process affect the performance characteristics of the silicon carbide beam?
A1: The recrystallisation enhances microstructural alignment and reduces grain-boundary defects. This results in improved thermal shock resistance and dimensional stability, which are essential for maintaining performance in high-temperature operations.

Q2: What measures should be taken during storage to maintain the beam's properties?
A2: Store the beam in a clean, dry environment with stable temperature control. Avoid abrupt temperature changes and mechanical impacts to prevent microstructural damage and preserve the beam's structural integrity.

Q3: Can the dimensions or density be customised?
A3: Dimensional adjustments may be feasible within manufacturing tolerances, while density is determined by the intrinsic properties of recrystallised SiC. Any modifications require a tailored production process and must undergo feasibility evaluation.

Additional Information

Silicon carbide is recognised for its high thermal conductivity and resistance to chemical attack, attributes that make it suitable for environments with elevated temperatures. The recrystallisation process further refines its microstructure, reducing defects and enhancing overall thermal stability. These characteristics are essential for applications in high-temperature industrial environments and semiconductor processing.

Advances in ceramic processing have allowed manufacturers to consistently produce SiC components with tighter tolerances and lower impurity levels. This progress supports ongoing research into high-performance materials and expands the potential for integrating recrystallised ceramics in various industrial applications requiring reliable performance in harsh conditions.